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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
I. A. Zur, V. Yu. Leonenko, A. K. Fedotov, E. E. Shmanay, A. A. Kharchanka, N. I. Gorbachuk, E. A. Ermakova, S. S. Titova, O. A. Chuvenkova, S. Yu. Turishchev, Yu. A. Fedotova, S. A. Movchan, “Dependence of ac electrical resistivity on the thickness of the DLC layer in In/DLC//Si/In nanostructure”, Fizika Tverdogo Tela, 67:2 (2025), 246–256 |
| 2. |
V. V. Chistyakov, S. V. Ryabtsev, A. A. Al-Habeeb, S. M. Soloviev, S. Yu. Turishchev, “Chemometric analysis of the operation of PdO thin films as a chemical sensor for ozone molecules in the atmosphere”, Fizika i Tekhnika Poluprovodnikov, 59:7 (2025), 383–387 |
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2021 |
| 3. |
S. V. Ryabtsev, D. A. A. Ghareeb, S. Yu. Turishchev, L. A. Obvintseva, A. V. Shaposhnik, È. P. Domashevskaya, “Structural and gas-sensitive characteristics of thin semiconductor PdO films of various thicknesses during ozone detection”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1034–1039 |
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2017 |
| 4. |
S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, A. V. Ershov, A. I. Mashin, E. V. Parinova, D. N. Nesterov, D. A. Grachev, I. A. Karabanova, È. P. Domashevskaya, “Formation of silicon nanocrystals in multilayer nanoperiodic $a$-SiO$_{x}$/insulator structures from the results of synchrotron investigations”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 363–366 ; Semiconductors, 51:3 (2017), 349–352 |
5
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2016 |
| 5. |
M. D. Manyakin, S. I. Kurganskii, O. I. Dubrovskii, O. A. Chuvenkova, È. P. Domashevskaya, S. Yu. Turishchev, “Ab initio calculation and synchrotron X-ray spectroscopy investigations of tin oxides near the Sn $L_{3}$”, Fizika Tverdogo Tela, 58:12 (2016), 2294–2298 ; Phys. Solid State, 58:12 (2016), 2379–2384 |
1
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| 6. |
È. P. Domashevskaya, V. A. Terekhov, S. Yu. Turishchev, D. E. Spirin, A. V. Chernyshev, Yu. E. Kalinin, A. V. Sitnikov, “Interatomic interactions at interfaces of multilayered nanostructures (Co$_{45}$Fe$_{45}$Zr$_{10}$/$a$-Si)$_{40}$ and (Co$_{45}$Fe$_{45}$Zr$_{10}$/Si$_{2}$)$_{32}$”, Fizika Tverdogo Tela, 58:5 (2016), 991–999 ; Phys. Solid State, 58:5 (2016), 1024–1033 |
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| 7. |
S. V. Ryabtsev, O. A. Chuvenkova, S. V. Kannykin, A. E. Popov, N. S. Ryabtseva, S. S. Voischev, S. Yu. Turishchev, È. P. Domashevskaya, “On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 180–184 ; Semiconductors, 50:2 (2016), 180–184 |
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2015 |
| 8. |
O. A. Chuvenkova, È. P. Domashevskaya, S. V. Ryabtsev, Yu. A. Yurakov, A. E. Popov, D. A. Koyuda, D. N. Nesterov, D. E. Spirin, R. Yu. Ovsyannikov, S. Yu. Turishchev, “XANES and XPS investigations of surface defects in wire-like SnO$_2$ crystals”, Fizika Tverdogo Tela, 57:1 (2015), 145–152 ; Phys. Solid State, 57:1 (2015), 153–161 |
46
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| 9. |
S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, D. E. Spirin, E. V. Parinova, D. N. Nesterov, D. A. Grachev, I. A. Karabanova, A. V. Ershov, A. I. Mashin, È. P. Domashevskaya, “Formation of Si nanocrystals in multilayered nanoperiodic Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) structures: Synchrotron and photoluminescence data”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 421–425 ; Semiconductors, 49:3 (2015), 409–413 |
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| 10. |
V. A. Terekhov, E. V. Parinova, È. P. Domashevskaya, A. S. Sadchikov, E. I. Terukov, Yu. K. Undalov, B. V. Senkovskiy, S. Yu. Turishchev, “Peculiarities of the electronic structure and phase composition of amorphous (SiO$_2$)$_x$($a$-Si:H)$_{x-1}$ composite films according to X-ray spectroscopy data”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015), 82–88 ; Tech. Phys. Lett., 41:10 (2015), 1010–1012 |
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| 11. |
S. Yu. Turishchev, V. A. Terekhov, D. N. Nesterov, K. G. Koltygina, V. A. Sivakov, È. P. Domashevskaya, “Atomic and electronic structure peculiarities of silicon wires formed on substrates with varied resistivity according to ultrasoft X-ray emission spectroscopy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:7 (2015), 81–88 ; Tech. Phys. Lett., 41:4 (2015), 344–347 |
5
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2014 |
| 12. |
V. A. Terekhov, S. K. Lazaruk, D. S. Usol'tseva, A. A. Leshok, P. S. Katsuba, I. E. Zanin, D. E. Spirin, A. A. Stepanova, S. Yu. Turishchev, “Specific features of the electronic and atomic structures of silicon single crystals in the aluminum matrix”, Fizika Tverdogo Tela, 56:12 (2014), 2452–2456 ; Phys. Solid State, 56:12 (2014), 2543–2547 |
1
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| 13. |
È. P. Domashevskaya, A. V. Chernyshev, S. Yu. Turishchev, Yu. E. Kalinin, A. V. Sitnikov, D. E. Marchenko, “X-Ray photoelectron spectroscopy investigations of atomic interactions in surface layers of multilayered nanostructures (Co$_{45}$Fe$_{45}$Zr$_{10}$/$a$-Si)$_{40}$ and (Co$_{45}$Fe$_{45}$Zr$_{10}$/SiO$_2$)$_{32}$”, Fizika Tverdogo Tela, 56:11 (2014), 2219–2230 ; Phys. Solid State, 56:11 (2014), 2294–2306 |
11
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| 14. |
S. Yu. Turishchev, E. V. Parinova, F. Kronast, R. Ovsyannikov, N. V. Malashchenok, E. A. Strel'tsov, D. K. Ivanov, A. K. Fedotov, “Photoemission electron microscopy of arrays of submicron nickel rods in a silicon dioxide matrix”, Fizika Tverdogo Tela, 56:9 (2014), 1851–1856 ; Phys. Solid State, 56:9 (2014), 1916–1921 |
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| 15. |
S. I. Kurganskii, M. D. Manyakin, O. I. Dubrovskii, O. A. Chuvenkova, S. Yu. Turishchev, È. P. Domashevskaya, “Theoretical and experimental study of the electronic structure of tin dioxide”, Fizika Tverdogo Tela, 56:9 (2014), 1690–1695 ; Phys. Solid State, 56:9 (2014), 1748–1753 |
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2013 |
| 16. |
È. P. Domashevskaya, A. V. Chernyshev, S. Yu. Turishchev, Yu. E. Kalinin, A. V. Sitnikov, D. E. Marchenko, “XANES investigations of interatomic interactions in multilayered nanostructures (Co$_{45}$Fe$_{45}$Zr$_{10}$/$a$-Si)$_{40}$ and (Co$_{45}$Fe$_{45}$Zr$_{10}$/SiO$_2$)$_{32}$”, Fizika Tverdogo Tela, 55:6 (2013), 1202–1210 ; Phys. Solid State, 55:6 (2013), 1294–1303 |
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| 17. |
È. P. Domashevskaya, V. A. Terekhov, S. Yu. Turishchev, D. A. Koyuda, N. A. Rumyantseva, Yu. P. Pershin, V. V. Kondratenko, N. Appathurai, “Synchrotron investigations of Si/Mo/Si $\dots$ $c$-Si (100) multilayer nanoperiodic structures”, Fizika Tverdogo Tela, 55:3 (2013), 577–584 ; Phys. Solid State, 55:3 (2013), 634–641 |
4
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| 18. |
S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, K. N. Pankov, A. V. Ershov, D. A. Grachev, A. I. Mashin, È. P. Domashevskaya, “Synchrotron study of the formation of nanoclusters in Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) multilayer nanostructures”, Fizika i Tekhnika Poluprovodnikov, 47:10 (2013), 1327–1334 ; Semiconductors, 47:10 (2013), 1316–1323 |
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2012 |
| 19. |
A. S. Len'shin, V. M. Kashkarov, S. Yu. Turishchev, M. S. Smirnov, È. P. Domashevskaya, “Influence of natural aging on photoluminescence from porous silicon”, Zhurnal Tekhnicheskoi Fiziki, 82:2 (2012), 150–152 ; Tech. Phys., 57:2 (2012), 305–307 |
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2011 |
| 20. |
A. S. Len'shin, V. M. Kashkarov, S. Yu. Turishchev, M. S. Smirnov, È. P. Domashevskaya, “Effect of natural aging on photoluminescence of porous silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:17 (2011), 1–8 ; Tech. Phys. Lett., 37:9 (2011), 789–792 |
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