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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
V. V. Kozlovsky, O. Korolkov, K. S. Davydovskaja, A. A. Lebedev, M. E. Levinshteĭn, N. Sleptsuk, A. M. Strel'chuk, J. Toompuu, “Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 35–37   ; Tech. Phys. Lett., 46:3 (2020), 287–289 |
8
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2019 |
| 2. |
O. M. Korolkov, V. V. Kozlovsky, A. A. Lebedev, N. Sleptsuk, J. Toompuu, T. Rang, “Low-temperature annealing of lightly doped $n$-4$H$-SiC layers after irradiation with fast electrons”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 991–994 ; Semiconductors, 53:7 (2019), 975–978 |
6
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2012 |
| 3. |
P. A. Ivanov, I. V. Grekhov, A. S. Potapov, O. I. Kon'kov, N. D. Il'inskaya, T. P. Samsonova, O. Korolkov, N. Sleptsuk, “Leakage currents in 4H-SiC JBS diodes”, Fizika i Tekhnika Poluprovodnikov, 46:3 (2012), 411–415 ; Semiconductors, 46:3 (2012), 397–400 |
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