|
|
|
Publications in Math-Net.Ru |
Citations |
|
2024 |
| 1. |
A. S. Puzanov, I. Yu. Zabavichev, N. D. Abrosimova, V. V. Bibikova, E. V. Volkova, A. D. Nedoshivina, A. A. Potekhin, E. A. Tarasova, S. V. Khazanova, B. A. Loginov, D. Yu. Blinnikov, V. S. Vtorova, E. A. Lyashko, V. V. Kirillova, V. S. Makeev, A. R. Pervykh, S. V. Obolensky, “Fluctuation analysis of the surface microrelief of silicon-on-insulator structures after radiation exposure”, Fizika i Tekhnika Poluprovodnikov, 58:12 (2024), 668–675   |
|
2023 |
| 2. |
B. A. Loginov, D. Yu. Blinnikov, V. S. Vtorova, V. V. Kirillova, E. A. Lyashko, V. S. Makeev, A. R. Pervykh, N. D. Abrosimova, I. Yu. Zabavichev, A. S. Puzanov, E. V. Volkova, E. A. Tarasova, S. V. Obolensky, “Silicon-on-insulator structures microtopography transformations features after photonic and corpuscular radiation exposure”, Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023), 1025–1031 |
|
2022 |
| 3. |
N. D. Abrosimova, P. A. Yunin, M. N. Drozdov, S. V. Obolenskiy, “Effect of hydrogen implantation dose on the relaxation of electrophysical characteristics of silicon-on-insulator structures after exposure to X-rays”, Fizika i Tekhnika Poluprovodnikov, 56:8 (2022), 753–758 |
2
|
|
2020 |
| 4. |
N. D. Abrosimova, M. N. Drozdov, S. V. Obolensky, “Secondary-ion mass spectroscopy for analysis of the implanted hydrogen profile in silicon and impurity composition of silicon-on-insulator structures”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1850–1853 ; Tech. Phys., 65:11 (2020), 1767–1770 |
|
2015 |
| 5. |
O. P. Gus’kova, V. M. Vorotyntsev, N. D. Abrosimova, A. N. Mikhaylov, D. I. Tetelbaum, E. L. Shobolov, “Formation of fluorine-containing defects and nanocrystals in SiO$_2$ upon implantation with fluorine, silicon, and germanium ions: Numerical simulation and photoluminescence spectroscopy”, Fizika Tverdogo Tela, 57:11 (2015), 2106–2111 ; Phys. Solid State, 57:11 (2015), 2164–2169 |
|
2014 |
| 6. |
E. L. Pankratov, O. P. Gus’kova, M. N. Drozdov, N. D. Abrosimova, V. M. Vorotyntsev, “Anomalous distribution of germanium implanted into a SOI dielectric layer after the annealing of radiation defects”, Fizika i Tekhnika Poluprovodnikov, 48:5 (2014), 631–635 ; Semiconductors, 48:5 (2014), 612–616 |
2
|
|
| Organisations |
|
|
