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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
E. A. Polushkin, S. V. Nefed'ev, O. A. Soltanovich, A. V. Kovalchuk, S. Yu. Shapoval, “Radiation hardness of bipolar transistor based integrated circuits improved by ECR hydrogen plasma treatment and Si-wafers gettering”, Fizika i Tekhnika Poluprovodnikov, 57:3 (2023), 195–201   |
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2020 |
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V. I. Garmash, V. E. Zemlyakov, V. I. Egorkin, A. V. Kovalchuk, S. Yu. Shapoval, “Investigation of the effect of atomic composition on the plasma-chemical etching rate of silicon nitride in high-power transistors based on an AlGaN/GaN heterojunction”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 748–752 ; Semiconductors, 54:8 (2020), 895–899 |
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