The analytical solution of the inverse problem for the spectrophotometric transparent layer on an absorbing substrate

For the first time, an analytical and numerical solution of the inverse problem for the spectrophotometric silicon dioxide layer on a silicon substrate is obtained. Analytical determination of the parameters of the layer and the substrate can be used as the first approximation in numerical calculations of the parameters of the three-layer model. Inhomogeneous structure of the surface and transition layers is interpreted by Maxwell–Garnett & Bruggeman model.