Phenomenological model of metal coating etching in a gas mixtured plasma

A phenomenological model of plasma-chemical etching of an aluminum coating is created, which is the basis of current-carrying microstructures in electronic product technologies, in a gas environment containing partial components BCl$_3$ $c_1 = (50$–$65$ vol.$\%)$, Cl$_2$ $c_2 = (25$–$35$ vol.$\%)$ and N$_2$ $c_3 = (0$–30 vol.$\%)$, at a pressure $P = 150$–$250$ mТоrr, and plasma power density $W = 1,6$–$2,2$ W/sm$^2$.