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Fizika i Tekhnika Poluprovodnikov, 1985, Volume 19, Issue 1, Pages 38–43 (Mi phts1017)  
Determination of Recombination Activity and Depth of Occurence of Point Defects in Semiconductor Crystals by the Method of Induced Current in a Scanning Electron Microscope

M. G. Mil'vidskii, V. B. Osvenskii, V. Ya. Reznik, A. N. Shershakov
Full-text PDF (795 kB)
Document Type: Article
Language: Russian
Citation: M. G. Mil'vidskii, V. B. Osvenskii, V. Ya. Reznik, A. N. Shershakov, “Determination of Recombination Activity and Depth of Occurence of Point Defects in Semiconductor Crystals by the Method of Induced Current in a Scanning Electron Microscope”, Fizika i Tekhnika Poluprovodnikov, 19:1 (1985), 38–43
Citation in format AMSBIB
\Bibitem{MilOsv85}
\by M.~G.~Mil'vidskii, V.~B.~Osvenskii, V.~Ya.~Reznik, A.~N.~Shershakov
\paper Determination of Recombination Activity and Depth of Occurence of Point Defects in Semiconductor Crystals by the Method of Induced
Current in a Scanning Electron Microscope
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1985
\vol 19
\issue 1
\pages 38--43
\mathnet{http://mi.mathnet.ru/phts1017}
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