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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 8, Pages 637–643
DOI: https://doi.org/10.21883/FTP.2021.08.51128.04 (Mi phts4993) 		 
XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Doping of carbon layers grown by the pulsed laser technique

Yu. A. Danilova, A. V. Alaferdovab, O. V. Vikhrovaa, D. A. Zdoroveishcheva, V. A. Koval'skiic, R. N. Kriukova, Yu. M. Kuznetsova, V. P. Lesnikova, A. V. Nezhdanova, M. N. Drozdovd

a Lobachevsky State University of Nizhny Novgorod
b Center for Semiconductor Components and Nanotechnologies, University of Campinas, 13083-870 Campinas, SP, Brazil
c Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Moscow region, Russia
d Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (284 kB)
DOI: https://doi.org/10.21883/FTP.2021.08.51128.04
Abstract: The possibilities of doping carbon layers grown by the method of pulsed laser deposition with transition metal impurities are investigated. The composition, optical and electrical parameters of structures on GaAs and Si/SiO$_2$ substrates are studied. It is shown that the introduction of atoms such as Fe modifies the magnetic properties of the layers, causing nonlinear magnetic field dependences of the Hall effect at temperatures up to 300 K.
Keywords: pulsed laser deposition, carbon layers, doping, transition-metal impurities.
Funding agency Grant number
Russian Foundation for Basic Research 18-29-19137_мк
Ministry of Education and Science of the Russian Federation 075-03-2020-191/5
The study was supported by the Russian Foundation for Basic Research, project no. 18-29-19137_mk, and the Ministry of Science and Higher Education of the Russian Federation, State assignment, project no. 075-03-2020-191/5.
Received: 09.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021
English version:
Semiconductors, 2021, Volume 55, Issue 8, Pages 660–666
DOI: https://doi.org/10.1134/S1063782621080054
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. A. Danilov, A. V. Alaferdov, O. V. Vikhrova, D. A. Zdoroveishchev, V. A. Koval'skii, R. N. Kriukov, Yu. M. Kuznetsov, V. P. Lesnikov, A. V. Nezhdanov, M. N. Drozdov, “Doping of carbon layers grown by the pulsed laser technique”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 637–643; Semiconductors, 55:8 (2021), 660–666
Citation in format AMSBIB
\Bibitem{DanAlaVik21}
\by Yu.~A.~Danilov, A.~V.~Alaferdov, O.~V.~Vikhrova, D.~A.~Zdoroveishchev, V.~A.~Koval'skii, R.~N.~Kriukov, Yu.~M.~Kuznetsov, V.~P.~Lesnikov, A.~V.~Nezhdanov, M.~N.~Drozdov
\paper Doping of carbon layers grown by the pulsed laser technique
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 8
\pages 637--643
\mathnet{http://mi.mathnet.ru/phts4993}
\crossref{https://doi.org/10.21883/FTP.2021.08.51128.04}
\elib{https://elibrary.ru/item.asp?id=46480614}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 8
\pages 660--666
\crossref{https://doi.org/10.1134/S1063782621080054}
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