Optical properties of quasi-bulk gallium-nitride crystals with highly oriented texture structure

The results of a study of the optical properties of gallium nitride samples with a highly oriented texture structure grown without the use of traditional semiconductor or sapphire substrates are presented. It is shown that the stacking faults contained in the GaN blocks of the texture of the studied material are self-organized heteropolytype nanostructures, and that the effective luminescence in the ultraviolet spectral region associated with stacking faults I1 in the basal plane is determined by optical transitions of excitons localized near such natural defects in the single-crystalline bulk of the blocks of the GaN texture.