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Amorphous, glassy, organic semiconductors
Charge transfer in thin layers of glassy Ge$_{28.5}$Pb$_{14.5}$Fe$_{0.5}$S$_{56.5}$
R. A. Kastro-Arataa, G. I. Grabkoab, A. A. Kononova, N. I. Anisimovaa, M. Krbalc, A. V. Kolobovad a Herzen State Pedagogical University of Russia, St. Petersburg
b Zabaikalsky State University, Chita
c Университет Пардубице, 530 02 Пардубице, Чехия
d National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
Abstract:
The results of investigation of charge transfer processes in thin layers of vitreous Ge$_{28.5}$Pb$_{14.5}$Fe$_{0.5}$S$_{56.5}$ are presented. The power-law dependence of specific conductivity on frequency and a decrease of the power exponent s value with increasing temperature were found. The charge transfer is a thermally ac- tivated process with the activation energy $E_a$ = (0.64 $\pm$ 0.02) eV. The results obtained are explained within the correlated barrier hopping model (CBH) of conductivity in disordered systems. The calculated concentration of lone-pair electrons L demonstrates that the material remains in the glass-forming region.
Keywords:
hopping transfer mechanism, thin layers, glassy hybrid system, lone-pair electrons.
Received: 18.01.2021 Revised: 25.01.2021 Accepted: 25.01.2021
Citation:
R. A. Kastro-Arata, G. I. Grabko, A. A. Kononov, N. I. Anisimova, M. Krbal, A. V. Kolobov, “Charge transfer in thin layers of glassy Ge$_{28.5}$Pb$_{14.5}$Fe$_{0.5}$S$_{56.5}$”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 450–454
Linking options:
https://www.mathnet.ru/eng/phts5040 https://www.mathnet.ru/eng/phts/v55/i5/p450
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