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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 9, Pages 922–928
DOI: https://doi.org/10.21883/FTP.2020.09.49833.25
(Mi phts5172)
 

This article is cited in 2 scientific papers (total in 2 papers)

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Multiphonon relaxation of $1s(T_{2})$ states of a single ionized selenium donor in silicon

N. A. Bekin

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (155 kB) Citations (2)
Abstract: The rate of multiphonon relaxation of $1s(T_2)$ level in Se$^+$ donors in silicon was estimated. The calculation is an initial approach to the problem, which uses the most simplified form of wave functions. For the probability of transition, we used a well-known expression from the literature by R. Pässler [R. Pässler. Czech. J. Phys. B, $\mathbf{24}$, 322 (1974)], obtained in the framework of the so-called “static coupling scheme”. The deformation potentials of optical and acoustic phonons were determined by a fitting procedure using published data on the luminescence spectrum of Se+ donors at the $1s(T_2)$$1s(A_1)$ transition and the Franck–Condon principle. The resulting estimate for the relaxation rate, 10$^3$ s$^{-1}$, was five orders of magnitude less than the rate corresponding to the experimentally measured lifetime. The reason for the discrepancy with the experiment is an oversimplified model that does not take into account several factors, the main of which is the presence of quasi-local vibrational modes. Analysis of the luminescence spectrum at this transition leads to the conclusion that the energies of such vibrational modes lie in the range from 26 to 61 meV. For a satisfactory agreement with the experiment, it is necessary to complicate the model, taking into account the interaction with these modes.
Keywords: deep impurities, selenium donors in silicon, multiphonon relaxation, Franck–Condon principle.
Funding agency Grant number
Russian Foundation for Basic Research 389056032
18-502-12077-ÍÍÈÎ
This study was supported by the joint Russian–German RFBR-DFG project (DFG project no. 389056032 and RFBR project no. 18-502-12077-DFG).
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 9, Pages 1112–1118
DOI: https://doi.org/10.1134/S1063782620090043
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Bekin, “Multiphonon relaxation of $1s(T_{2})$ states of a single ionized selenium donor in silicon”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 922–928; Semiconductors, 54:9 (2020), 1112–1118
Citation in format AMSBIB
\Bibitem{Bek20}
\by N.~A.~Bekin
\paper Multiphonon relaxation of $1s(T_{2})$ states of a single ionized selenium donor in silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 9
\pages 922--928
\mathnet{http://mi.mathnet.ru/phts5172}
\crossref{https://doi.org/10.21883/FTP.2020.09.49833.25}
\elib{https://elibrary.ru/item.asp?id=44154200}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 9
\pages 1112--1118
\crossref{https://doi.org/10.1134/S1063782620090043}
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