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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 9, Pages 952–957
DOI: https://doi.org/10.21883/FTP.2020.09.49838.32 (Mi phts5177) 		 
This article is cited in 8 scientific papers (total in 8 papers)

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Luminescence photodynamics of hybrid-structured InP/InAsP/InP nanowires passivated by a layer of ТОРО-CdSe/ZnS quantum dots

A. I. Khrebtova, A. S. Kulaginaa, V. V. Danilovb, E. S. Gromovab, I. D. Skurlovc, A. P. Litvinc, R. R. Reznikc, I. V. Shtromad, G. E. Cirlinacd

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Emperor Alexander I St. Petersburg State Transport University
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
Full-text PDF (1224 kB) Citations (8)
DOI: https://doi.org/10.21883/FTP.2020.09.49838.32
Abstract: The results of studies of the photodynamics of the excited state decay of a hybrid semiconductor nanostructure, which is an array of InP nanowires with InAsP nanoinsertions passivated with a layer of TOPO (trioctylphosphine oxide) containing colloidal CdSe/ZnS quantum dots, are presented. Time- and spectrally resolved measurement of photoluminescence InAsP nanoinsertions in the near infrared region at temperatures of 80 K and 293 K were made. The presence of a quasi-Langmuir layer of TOPO-CdSe/ZnS quantum dots on the surface of InP/InAsP/InP nanowires leads to an increase in the duration of radiative recombination and its dependence on temperature. It was found that the synthesized structure has a type-II heterojunction at the interface between the InAsP nanoinsertion and the InP volume. The influence of interfacial processes on increasing the duration of radiative recombination is discussed.
Keywords: molecular-beam epitaxy, nanowires, colloidal quantum dots, luminescence.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0791-2020-0003
Russian Science Foundation 19-72-30010
Russian Foundation for Basic Research 18-32-00980 мол_а
The part of the study concerned with the synthesis of samples was supported by the Ministry of Education and Science of the Russian Federation, government order. The part of the study concerned with spectroscopic measurements was supported by the Russian Science Foundation, project no. 19-72-30010. The part of the study concerned with recording steady-state PL spectra was supported by the Russian Foundation for Basic Research, project no. 18-32-00980 mol_a.
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 9, Pages 1141–1146
DOI: https://doi.org/10.1134/S1063782620090158
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Khrebtov, A. S. Kulagina, V. V. Danilov, E. S. Gromova, I. D. Skurlov, A. P. Litvin, R. R. Reznik, I. V. Shtrom, G. E. Cirlin, “Luminescence photodynamics of hybrid-structured InP/InAsP/InP nanowires passivated by a layer of ТОРО-CdSe/ZnS quantum dots”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 952–957; Semiconductors, 54:9 (2020), 1141–1146
Citation in format AMSBIB
\Bibitem{KhrKulDan20}
\by A.~I.~Khrebtov, A.~S.~Kulagina, V.~V.~Danilov, E.~S.~Gromova, I.~D.~Skurlov, A.~P.~Litvin, R.~R.~Reznik, I.~V.~Shtrom, G.~E.~Cirlin
\paper Luminescence photodynamics of hybrid-structured InP/InAsP/InP nanowires passivated by a layer of ТОРО-CdSe/ZnS quantum dots
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 9
\pages 952--957
\mathnet{http://mi.mathnet.ru/phts5177}
\crossref{https://doi.org/10.21883/FTP.2020.09.49838.32}
\elib{https://elibrary.ru/item.asp?id=44154205}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 9
\pages 1141--1146
\crossref{https://doi.org/10.1134/S1063782620090158}
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