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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 6, Pages 523–526
DOI: https://doi.org/10.21883/FTP.2020.06.49378.9346
(Mi phts5215)
 

This article is cited in 1 scientific paper (total in 1 paper)

Electronic properties of semiconductors

AC electrical conductivity of FeGaInSe$_{4}$

N. N. Niftiyeva, F. M. Mammadovb, M. B. Muradovc

a N. Tusi Azerbaijan State Pedagogical University, Baku, Azerbaijan
b Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku, Azerbaijan
c Baku State University
Full-text PDF (211 kB) Citations (1)
Abstract: The results of studying frequency and temperature dependences of AC electrical conductivity in FeGaInSe$_{4}$ crystals are presented. It was found in the frequency interval $f$ = 5 $\times$ 10$^{4}$–10$^{6}$ Hz, the regularity $\sigma\propto f^{S}$ (0.1 $\le$ s $\le$ 1.0) holds for electrical conductivity. From the temperuture dependences the activation energies were determined. It is shown that in the FeGaInSe$_{4}$ crystal, the frequency dependence of electrical conductivity can be explained using the multiplet model, which means that the conductivity in these crystals is characterized by a band-hop mechanism.
Keywords: electrical conductivity, zone-hopping mechanism, FeGaInSe$_{4}$ crystals.
Received: 14.01.2020
Revised: 04.02.2020
Accepted: 14.02.2020
English version:
Semiconductors, 2020, Volume 54, Issue 6, Pages 627–629
DOI: https://doi.org/10.1134/S1063782620060123
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. N. Niftiyev, F. M. Mammadov, M. B. Muradov, “AC electrical conductivity of FeGaInSe$_{4}$”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 523–526; Semiconductors, 54:6 (2020), 627–629
Citation in format AMSBIB
\Bibitem{NifMamMur20}
\by N.~N.~Niftiyev, F.~M.~Mammadov, M.~B.~Muradov
\paper AC electrical conductivity of FeGaInSe$_{4}$
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 6
\pages 523--526
\mathnet{http://mi.mathnet.ru/phts5215}
\crossref{https://doi.org/10.21883/FTP.2020.06.49378.9346}
\elib{https://elibrary.ru/item.asp?id=43800462}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 6
\pages 627--629
\crossref{https://doi.org/10.1134/S1063782620060123}
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  • This publication is cited in the following 1 articles:
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