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This article is cited in 1 scientific paper (total in 1 paper)
Electronic properties of semiconductors
AC electrical conductivity of FeGaInSe$_{4}$
N. N. Niftiyeva, F. M. Mammadovb, M. B. Muradovc a N. Tusi Azerbaijan State Pedagogical University, Baku, Azerbaijan
b Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku, Azerbaijan
c Baku State University
Abstract:
The results of studying frequency and temperature dependences of AC electrical conductivity in FeGaInSe$_{4}$ crystals are presented. It was found in the frequency interval $f$ = 5 $\times$ 10$^{4}$–10$^{6}$ Hz, the regularity $\sigma\propto f^{S}$ (0.1 $\le$ s $\le$ 1.0) holds for electrical conductivity. From the temperuture dependences the activation energies were determined. It is shown that in the FeGaInSe$_{4}$ crystal, the frequency dependence of electrical conductivity can be explained using the multiplet model, which means that the conductivity in these crystals is characterized by a band-hop mechanism.
Keywords:
electrical conductivity, zone-hopping mechanism, FeGaInSe$_{4}$ crystals.
Received: 14.01.2020 Revised: 04.02.2020 Accepted: 14.02.2020
Citation:
N. N. Niftiyev, F. M. Mammadov, M. B. Muradov, “AC electrical conductivity of FeGaInSe$_{4}$”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 523–526; Semiconductors, 54:6 (2020), 627–629
Linking options:
https://www.mathnet.ru/eng/phts5215 https://www.mathnet.ru/eng/phts/v54/i6/p523
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