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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 12, Pages 1697–1707
DOI: https://doi.org/10.21883/FTP.2019.12.48630.9215 (Mi phts5338) 		 
This article is cited in 8 scientific papers (total in 8 papers)

Semiconductor physics

On the application of Schottky contacts in the microwave, extremely high frequency, and THz ranges

N. A. Torkhovab, L. I. Babakb, A. A. Kokolovb

a Scientific-Research Institute of Semiconductor Devices, Tomsk
b Tomsk State University of Control Systems and Radioelectronics
Full-text PDF (916 kB) Citations (8)
DOI: https://doi.org/10.21883/FTP.2019.12.48630.9215
Abstract: The broad range of possibilities for optimizing the design and electrical parameters of crystals of Schottky diodes, manufactured according to the mesa–substrate and mesa–mesa planar technologies with anode terminals in the form of an air bridge with a whisker, along with the use of higher quality compact models, make it possible to efficiently exploit the physical potential of Schottky contacts when designing monolithic integrated circuits according to diode technologies, increase their reliability, and overcome the significant lag of semiconductor electronics behind optoelectronics in the terahertz (THz) frequency range.
Keywords: microwaves, extremely high frequencies, THz, compact model, planar Schottky diode, whisker, air bridge.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 8.4029.2017/4.6
This study was supported by the Ministry of Science and Higher Education of the Russian Federation, unique identifier no. 8.4029.2017/4.6.
Received: 15.07.2019
Revised: 22.07.2019
Accepted: 22.07.2019
English version:
Semiconductors, 2019, Volume 53, Issue 12, Pages 1688–1698
DOI: https://doi.org/10.1134/S1063782619160280
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Torkhov, L. I. Babak, A. A. Kokolov, “On the application of Schottky contacts in the microwave, extremely high frequency, and THz ranges”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1697–1707; Semiconductors, 53:12 (2019), 1688–1698
Citation in format AMSBIB
\Bibitem{TorBabKok19}
\by N.~A.~Torkhov, L.~I.~Babak, A.~A.~Kokolov
\paper On the application of Schottky contacts in the microwave, extremely high frequency, and THz ranges
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 12
\pages 1697--1707
\mathnet{http://mi.mathnet.ru/phts5338}
\crossref{https://doi.org/10.21883/FTP.2019.12.48630.9215}
\elib{https://elibrary.ru/item.asp?id=41848201}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 12
\pages 1688--1698
\crossref{https://doi.org/10.1134/S1063782619160280}
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  • https://www.mathnet.ru/eng/phts/v53/i12/p1697
    • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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