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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 7, Pages 985–990
DOI: https://doi.org/10.21883/FTP.2019.07.47878.9056 (Mi phts5466) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor physics

High voltage diffused step recovery diodes. II. Theory

A. S. Kyuregyan

NPO Energomodule, Moscow, Russia
Full-text PDF (229 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2019.07.47878.9056
Abstract: Approximate analytical formulas are obtained to evaluate the main characteristics of diffused step recovery diodes (SRD) operating as current interrupters in high-power generators of nanosecond pulses with an inductive energy storage: the unwanted pre-pulse voltage, characterizing resistive losses in SRD, amplitude, duration of front and duration of voltage pulse formed on the resistive load. For comparison, similar formulas for epitaxial SRD, partially obtained for the first time, and partially clarifying the early results, are given.
Funding agency Grant number
Russian Foundation for Basic Research 16-08-01292
Received: 27.12.2018
Revised: 18.01.2019
Accepted: 29.01.2019
English version:
Semiconductors, 2019, Volume 53, Issue 7, Pages 969–974
DOI: https://doi.org/10.1134/S1063782619070157
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Kyuregyan, “High voltage diffused step recovery diodes. II. Theory”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 985–990; Semiconductors, 53:7 (2019), 969–974
Citation in format AMSBIB
\Bibitem{Kyu19}
\by A.~S.~Kyuregyan
\paper High voltage diffused step recovery diodes. II. Theory
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 7
\pages 985--990
\mathnet{http://mi.mathnet.ru/phts5466}
\crossref{https://doi.org/10.21883/FTP.2019.07.47878.9056}
\elib{https://elibrary.ru/item.asp?id=39133327}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 7
\pages 969--974
\crossref{https://doi.org/10.1134/S1063782619070157}
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  • https://www.mathnet.ru/eng/phts/v53/i7/p985
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