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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 7, Pages 991–994
DOI: https://doi.org/10.21883/FTP.2019.07.47879.9089 (Mi phts5467) 		 
This article is cited in 6 scientific papers (total in 6 papers)

Semiconductor physics

Low-temperature annealing of lightly doped $n$-4$H$-SiC layers after irradiation with fast electrons

O. M. Korolkova, V. V. Kozlovskyb, A. A. Lebedevc, N. Sleptsuka, J. Toompuua, T. Ranga

a Tallinn University of Technology, Tallinn, Estonia
b Peter the Great St. Petersburg Polytechnic University
c Ioffe Institute, St. Petersburg
Full-text PDF (209 kB) Citations (6)
DOI: https://doi.org/10.21883/FTP.2019.07.47879.9089
Abstract: The effect of low-temperature (up to 600$^{\circ}$C) isothermal and isochronous annealing on the electrical characteristics of irradiated $n$-4$H$-SiC JBS Schottky diodes is studied. Irradiation is performed with 0.9-MeV electrons at a dose of 1 $\times$ 10$^{16}$ cm$^{-2}$. It is shown that the forward current–voltage (I – V) and capacitance–voltage (C – V) characteristics of the irradiated diodes are mainly restored at annealing temperatures of up to 300$^{\circ}$C. As the annealing temperature is raised to 500$^{\circ}$C, nearly 90% of the defects introduced by irradiation with fast electrons are annealed out. The possible recommended mode of stabilizing annealing to be used in radiation-defect engineering (RDE) is 500$^{\circ}$C, 30 min.
Received: 21.02.2019
Revised: 24.02.2019
Accepted: 24.02.2019
English version:
Semiconductors, 2019, Volume 53, Issue 7, Pages 975–978
DOI: https://doi.org/10.1134/S1063782619070133
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. M. Korolkov, V. V. Kozlovsky, A. A. Lebedev, N. Sleptsuk, J. Toompuu, T. Rang, “Low-temperature annealing of lightly doped $n$-4$H$-SiC layers after irradiation with fast electrons”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 991–994; Semiconductors, 53:7 (2019), 975–978
Citation in format AMSBIB
\Bibitem{KorKozLeb19}
\by O.~M.~Korolkov, V.~V.~Kozlovsky, A.~A.~Lebedev, N.~Sleptsuk, J.~Toompuu, T.~Rang
\paper Low-temperature annealing of lightly doped $n$-4$H$-SiC layers after irradiation with fast electrons
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 7
\pages 991--994
\mathnet{http://mi.mathnet.ru/phts5467}
\crossref{https://doi.org/10.21883/FTP.2019.07.47879.9089}
\elib{https://elibrary.ru/item.asp?id=39133328}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 7
\pages 975--978
\crossref{https://doi.org/10.1134/S1063782619070133}
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    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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