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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 2, Pages 216–220
DOI: https://doi.org/10.21883/FTP.2019.02.47101.8956 (Mi phts5589) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Semiconductor structures, low-dimensional systems, quantum phenomena

Silicon nanopillar microarrays: formation and resonance reflection of light

L. S. Basalaevaa, Yu. V. Nastausheva, F. N. Dultsevab, N. V. Kryzhanovskayac, È. I. Moiseevc

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
Full-text PDF (384 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2019.02.47101.8956
Abstract: The results of investigating the spectral characteristics of reflection from silicon nanopillar (Si NP) microarrays in the wavelength region from 400 to 1100 nm are presented. The Si nanopillars are formed by electron lithography on a negative resist with subsequent reactive ion etching. The Si nanopillars are etched through a resist mask and SiO$_2$ 100 nm thick. In the spectra of reflection from nanopillar microarrays, minima are observed, the position of which depends strongly on the Si nanopillar diameter.
Funding agency Grant number
Russian Science Foundation 14-22-00143
Russian Foundation for Basic Research 17-42-543293
Ministry of Education and Science of the Russian Federation 3.9787.2017/8.9
Received: 10.07.2018
Revised: 21.08.2018
English version:
Semiconductors, 2019, Volume 53, Issue 2, Pages 205–209
DOI: https://doi.org/10.1134/S1063782619020027
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. S. Basalaeva, Yu. V. Nastaushev, F. N. Dultsev, N. V. Kryzhanovskaya, È. I. Moiseev, “Silicon nanopillar microarrays: formation and resonance reflection of light”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 216–220; Semiconductors, 53:2 (2019), 205–209
Citation in format AMSBIB
\Bibitem{BasNasDul19}
\by L.~S.~Basalaeva, Yu.~V.~Nastaushev, F.~N.~Dultsev, N.~V.~Kryzhanovskaya, \`E.~I.~Moiseev
\paper Silicon nanopillar microarrays: formation and resonance reflection of light
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 2
\pages 216--220
\mathnet{http://mi.mathnet.ru/phts5589}
\crossref{https://doi.org/10.21883/FTP.2019.02.47101.8956}
\elib{https://elibrary.ru/item.asp?id=37476846}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 2
\pages 205--209
\crossref{https://doi.org/10.1134/S1063782619020027}
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  • https://www.mathnet.ru/eng/phts/v53/i2/p216
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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