Effect of the hydrogen concentration on the Pd/$n$-InP Schottky diode photocurrent

The variation rate of the short-circuit photocurrent of Pd/$n$-InP Schottky diodes is studied as a function of the presence of hydrogen in a gas mixture with H$_2$ concentrations of 1–100 vol %. It is shown that upon the simultaneous exposure of the Schottky diode to a hydrogen-containing gas mixture and to light ($\lambda$ = 0.9 $\mu$m), the hydrogen concentration in the gas mixture and the Pd/$n$-InP diode photocurrent variation rate are related exponentially. The Schottky-diode response rate to the presence of hydrogen in the gas mixture increases with the illumination intensity.