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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 13, Pages 1668–1674
DOI: https://doi.org/10.21883/FTP.2018.13.46885.8937 (Mi phts5647) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Manufacturing, processing, testing of materials and structures

Precision chemical etching of GaP(NAs) epitaxial layers for the formation of monolithic optoelectronic devices

D. A. Kudriashova, A. S. Gudovskikhab, A. I. Baranova

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (1139 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2018.13.46885.8937
Abstract: The results of studying the applicability of various etchants for the precision wet etching of structures of monolithic optoelectronic devices containing GaPNAs layers are presented. It is shown that an etchant based on potassium iodide and hydrochloric acid is best suited for this purpose. The presence of nitrogen (up to 4%) and arsenic in the semiconductor composition does not greatly affect the etchant action but requires additional calibration experiments to refine the etching rate in each particular case. Examples of the practical application of precision etching to measure the characteristics of GaPNAs-based solar cells are presented.
Funding agency Grant number
Russian Science Foundation 17-19-01482
Received: 18.06.2018
Accepted: 02.07.2018
English version:
Semiconductors, 2018, Volume 52, Issue 13, Pages 1775–1781
DOI: https://doi.org/10.1134/S1063782618130092
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. A. Kudriashov, A. S. Gudovskikh, A. I. Baranov, “Precision chemical etching of GaP(NAs) epitaxial layers for the formation of monolithic optoelectronic devices”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1668–1674; Semiconductors, 52:13 (2018), 1775–1781
Citation in format AMSBIB
\Bibitem{KudGudBar18}
\by D.~A.~Kudriashov, A.~S.~Gudovskikh, A.~I.~Baranov
\paper Precision chemical etching of GaP(NAs) epitaxial layers for the formation of monolithic optoelectronic devices
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 13
\pages 1668--1674
\mathnet{http://mi.mathnet.ru/phts5647}
\crossref{https://doi.org/10.21883/FTP.2018.13.46885.8937}
\elib{https://elibrary.ru/item.asp?id=36903672}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 13
\pages 1775--1781
\crossref{https://doi.org/10.1134/S1063782618130092}
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  • https://www.mathnet.ru/eng/phts/v52/i13/p1668
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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