S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. G. Kuz'menkov, A. P. Vasil'ev, Yu. M. Zadiranov, E. A. Evropeitsev, A. V. Sakharov, N. N. Ledentsov, L. Ya. Karachinsky, A. M. Ospennikov, N. A. Maleev, V. M. Ustinov, “Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 98–104; Semiconductors, 52:1 (2018), 93

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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 1, Pages 98–104
DOI: https://doi.org/10.21883/FTP.2018.01.45326.8657 (Mi phts5948)

This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor physics

Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells

S. A. Blokhin^a, M. A. Bobrov^a, A. A. Blokhin^a, A. G. Kuz'menkov^ab, A. P. Vasil'ev^ab, Yu. M. Zadiranov^a, E. A. Evropeitsev^a, A. V. Sakharov^a, N. N. Ledentsov^c, L. Ya. Karachinsky^ad, A. M. Ospennikov^e, N. A. Maleev^a, V. M. Ustinov^abf

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c VI Systems GmbH, Berlin, Germany,
^d Connector Optics LLC, St. Petersburg
^e Russian Institute of Radionavigation and Time, St. Petersburg
^f Peter the Great St. Petersburg Polytechnic University

Full-text PDF (353 kB) Citations (2)

DOI: https://doi.org/10.21883/FTP.2018.01.45326.8657

Abstract: The emission-line width for 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells is studied. The width of the emission line for a laser with a 2-$\mu$m oxide current aperture attains it minimum ($\sim$110 MHz) at an output power of 0.8 mW. As the optical output power is further increased, anomalous broadening of the emission line is observed; this is apparently caused by an increase in the $\alpha$-factor as a result of a decrease in the differential gain in the active region under conditions of increased concentration of charge carriers and of high internal optical losses in the microcavity. The $\alpha$-factor is estimated using two independent methods.

Received: 25.05.2017
Accepted: 30.05.2017

English version:
Semiconductors, 2018, Volume 52, Issue 1, Pages 93–99
DOI: https://doi.org/10.1134/S1063782618010062

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. G. Kuz'menkov, A. P. Vasil'ev, Yu. M. Zadiranov, E. A. Evropeitsev, A. V. Sakharov, N. N. Ledentsov, L. Ya. Karachinsky, A. M. Ospennikov, N. A. Maleev, V. M. Ustinov, “Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 98–104; Semiconductors, 52:1 (2018), 93–99

Citation in format AMSBIB

\Bibitem{BloBobBlo18}

\by S.~A.~Blokhin, M.~A.~Bobrov, A.~A.~Blokhin, A.~G.~Kuz'menkov, A.~P.~Vasil'ev, Yu.~M.~Zadiranov, E.~A.~Evropeitsev, A.~V.~Sakharov, N.~N.~Ledentsov, L.~Ya.~Karachinsky, A.~M.~Ospennikov, N.~A.~Maleev, V.~M.~Ustinov

\paper Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells

\jour Fizika i Tekhnika Poluprovodnikov

\yr 2018

\vol 52

\issue 1

\pages 98--104

\mathnet{http://mi.mathnet.ru/phts5948}

\crossref{https://doi.org/10.21883/FTP.2018.01.45326.8657}

\elib{https://elibrary.ru/item.asp?id=34982793}

\transl

\jour Semiconductors

\yr 2018

\vol 52

\issue 1

\pages 93--99

\crossref{https://doi.org/10.1134/S1063782618010062}

Linking options:

https://www.mathnet.ru/eng/phts5948

https://www.mathnet.ru/eng/phts/v52/i1/p98

Synonym

Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells
S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. G. Kuz'menkov, A. P. Vasil'ev, Yu. M. Zadiranov, E. A. Evropeitsev, A. V. Sakharov, N. N. Ledentsov, L. Ya. Karachinsky, A. M. Ospennikov, N. A. Maleev, V. M. Ustinov
Fizika i Tekhnika Poluprovodnikov, 2018, 52:1, 98–104
Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells
S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. G. Kuz'menkov, A. P. Vasil'ev, Yu. M. Zadiranov, E. A. Evropeitsev, A. V. Sakharov, N. N. Ledentsov, L. Ya. Karachinsky, A. M. Ospennikov, N. A. Maleev, V. M. Ustinov
Fizika i Tekhnika Poluprovodnikov, 2017, 51:12, 1697

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