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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11, Pages 1447–1450
DOI: https://doi.org/10.21883/FTP.2017.11.45088.02 (Mi phts5985) 		 
XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots

A. P. Gorshkova, N. S. Volkovabc, P. G. Voronina, A. V. Zdoroveyshchevb, L. A. Istominc, D. A. Pavlova, Yu. V. Usova, S. B. Levichevb

a National Research Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
c Chemistry Research Institute of N. I. Lobachevsky, State University of Nizhny Novgorod
Full-text PDF (241 kB)
DOI: https://doi.org/10.21883/FTP.2017.11.45088.02
URL: https://journals.ioffe.ru/ftp/2017/11/page-1447.html.ru
Abstract: The capping of an array of self-assembled InAs/GaAs quantum dots by an InGaAs quantum-well layer leads to an increase in their size due to indium enrichment of the region near the top of the quantum dots, which decreases the energy of the ground-state optical transition in quantum dots by 50 meV and shifts the hole wave function toward the top of the quantum dot.
Received: 27.04.2017
Accepted: 12.05.2017
English version:
Semiconductors, 2017, Volume 51, Issue 11, Pages 1395–1398
DOI: https://doi.org/10.1134/S1063782617110136
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. P. Gorshkov, N. S. Volkova, P. G. Voronin, A. V. Zdoroveyshchev, L. A. Istomin, D. A. Pavlov, Yu. V. Usov, S. B. Levichev, “Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1447–1450; Semiconductors, 51:11 (2017), 1395–1398
Citation in format AMSBIB
\Bibitem{GorVolVor17}
\by A.~P.~Gorshkov, N.~S.~Volkova, P.~G.~Voronin, A.~V.~Zdoroveyshchev, L.~A.~Istomin, D.~A.~Pavlov, Yu.~V.~Usov, S.~B.~Levichev
\paper Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 11
\pages 1447--1450
\mathnet{http://mi.mathnet.ru/phts5985}
\crossref{https://doi.org/10.21883/FTP.2017.11.45088.02}
\elib{https://elibrary.ru/item.asp?id=30546378}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 11
\pages 1395--1398
\crossref{https://doi.org/10.1134/S1063782617110136}
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