Low-temperature deposition of SiN$_ x$ films in SiH$_{4}$/Ar + N$_{2}$ inductively coupled plasma under high silane dilution with argon

SiN$_x$ films on silicon are grown in SiH$_{4}$/Ar + N$_{2}$ inductively coupled plasma under high silane dilution with argon. The dependences of the deposition rate and properties of silicon nitride on the plasmagas composition, pressure, radio-frequency power and inductive power are studied. In some cases, the found dependences differ from published data for undiluted reagents. It is found that the lowest impurity content in films and their best properties are implemented at a nitrogen-to-silane ratio close to 1.4. An increase in the radio-frequency power results in smoother samples due to the polishing effect of argon ions.