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Amorphous, glassy, organic semiconductors
Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide
A. V. Marchenkoa, E. I. Terukovb, A. Yu. Egorovac, V. S. Kiseleva, P. P. Seregina a Herzen State Pedagogical University of Russia, St. Petersburg
b Ioffe Institute, St. Petersburg
c Saint-Petersburg State Mining Institute
Abstract:
Impurity iron atoms in vitreous arsenic-selenide As$_2$Se$_3$ films modified by iron form one-electron donor centers with an ionization energy of 0.24 (3) eV (the energy is counted from the conduction-band bottom). The Fermi level is shifted with an increase in the iron concentration from the mid-gap to the donorlevel position of iron due to the filling of one-electron states of the acceptor type lying below the Fermi level. At an iron concentration of $\ge$ 3 at %, the electron-exchange process is observed between neutral and ionized iron centers resulting in a change both in the electron density and in the tensor of the electric-field gradient at iron-atom nuclei with increasing temperature above 350 K.
Received: 22.09.2016 Accepted: 03.10.2016
Citation:
A. V. Marchenko, E. I. Terukov, A. Yu. Egorova, V. S. Kiselev, P. P. Seregin, “Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 472–476; Semiconductors, 51:4 (2017), 449–453
Linking options:
https://www.mathnet.ru/eng/phts6180 https://www.mathnet.ru/eng/phts/v51/i4/p472
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