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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 4, Pages 472–476
DOI: https://doi.org/10.21883/FTP.2017.04.44338.8411
(Mi phts6180)
 

Amorphous, glassy, organic semiconductors

Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide

A. V. Marchenkoa, E. I. Terukovb, A. Yu. Egorovac, V. S. Kiseleva, P. P. Seregina

a Herzen State Pedagogical University of Russia, St. Petersburg
b Ioffe Institute, St. Petersburg
c Saint-Petersburg State Mining Institute
Abstract: Impurity iron atoms in vitreous arsenic-selenide As$_2$Se$_3$ films modified by iron form one-electron donor centers with an ionization energy of 0.24 (3) eV (the energy is counted from the conduction-band bottom). The Fermi level is shifted with an increase in the iron concentration from the mid-gap to the donorlevel position of iron due to the filling of one-electron states of the acceptor type lying below the Fermi level. At an iron concentration of $\ge$ 3 at %, the electron-exchange process is observed between neutral and ionized iron centers resulting in a change both in the electron density and in the tensor of the electric-field gradient at iron-atom nuclei with increasing temperature above 350 K.
Received: 22.09.2016
Accepted: 03.10.2016
English version:
Semiconductors, 2017, Volume 51, Issue 4, Pages 449–453
DOI: https://doi.org/10.1134/S1063782617040133
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Marchenko, E. I. Terukov, A. Yu. Egorova, V. S. Kiselev, P. P. Seregin, “Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 472–476; Semiconductors, 51:4 (2017), 449–453
Citation in format AMSBIB
\Bibitem{MarTerEgo17}
\by A.~V.~Marchenko, E.~I.~Terukov, A.~Yu.~Egorova, V.~S.~Kiselev, P.~P.~Seregin
\paper Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 4
\pages 472--476
\mathnet{http://mi.mathnet.ru/phts6180}
\crossref{https://doi.org/10.21883/FTP.2017.04.44338.8411}
\elib{https://elibrary.ru/item.asp?id=29404887}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 4
\pages 449--453
\crossref{https://doi.org/10.1134/S1063782617040133}
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