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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11, Pages 1501–1508
(Mi phts6315)
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This article is cited in 1 scientific paper (total in 1 paper)
XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Anisotropy of the magnetocapacitance of structures based on PbSnTe : In/BaF$_{2}$ films
A. E. Klimov, V. S. Epov Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
The angular dependences of the capacitance of structures based on PbSnTe:In films in a magnetic field $B\le$ 4 T at various bias voltages, which have a distinct anisotropic pattern in the magnetic-field direction with capacitance modulation approximately by a factor of 1.5–2, are studied experimentally at $T$ = 4.2 K. The data obtained are compared with the experimental anisotropic angular dependences of the space-charge-limited current with current modulation up to a factor of 10$^2$–10$^4$ or greater. A qualitative model of the results obtained is considered.
Received: 27.04.2016 Accepted: 10.05.2016
Citation:
A. E. Klimov, V. S. Epov, “Anisotropy of the magnetocapacitance of structures based on PbSnTe : In/BaF$_{2}$ films”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1501–1508; Semiconductors, 50:11 (2016), 1479–1487
Linking options:
https://www.mathnet.ru/eng/phts6315 https://www.mathnet.ru/eng/phts/v50/i11/p1501
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