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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11, Pages 1501–1508 (Mi phts6315)  

This article is cited in 1 scientific paper (total in 1 paper)

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Anisotropy of the magnetocapacitance of structures based on PbSnTe : In/BaF$_{2}$ films

A. E. Klimov, V. S. Epov

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (418 kB) Citations (1)
Abstract: The angular dependences of the capacitance of structures based on PbSnTe:In films in a magnetic field $B\le$ 4 T at various bias voltages, which have a distinct anisotropic pattern in the magnetic-field direction with capacitance modulation approximately by a factor of 1.5–2, are studied experimentally at $T$ = 4.2 K. The data obtained are compared with the experimental anisotropic angular dependences of the space-charge-limited current with current modulation up to a factor of 10$^2$–10$^4$ or greater. A qualitative model of the results obtained is considered.
Received: 27.04.2016
Accepted: 10.05.2016
English version:
Semiconductors, 2016, Volume 50, Issue 11, Pages 1479–1487
DOI: https://doi.org/10.1134/S1063782616110130
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. E. Klimov, V. S. Epov, “Anisotropy of the magnetocapacitance of structures based on PbSnTe : In/BaF$_{2}$ films”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1501–1508; Semiconductors, 50:11 (2016), 1479–1487
Citation in format AMSBIB
\Bibitem{KliEpo16}
\by A.~E.~Klimov, V.~S.~Epov
\paper Anisotropy of the magnetocapacitance of structures based on PbSnTe : In/BaF$_{2}$ films
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 11
\pages 1501--1508
\mathnet{http://mi.mathnet.ru/phts6315}
\elib{https://elibrary.ru/item.asp?id=27369039}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 11
\pages 1479--1487
\crossref{https://doi.org/10.1134/S1063782616110130}
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