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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 6, Pages 721–724
(Mi phts6429)
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Electronic properties of semiconductors
Summary of the 12th Russian Conference on Semiconductor Physics (Ershovo, Zvenigorod, Moscow, September 20–25, 2015)
D. R. Khokhlovab a Faculty of Physics, Lomonosov Moscow State University
b P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
Abstract:
A summary of the 12th Russian Conference on Semiconductor Physics (RCSP-12), September 20–25, 2015, at “Ershovo” hotel near Zvenigorod, Moscow oblast, is presented. The statistics of reports within sections is given, the trends of changing study interests in comparison with the previous 11th Russian Conference on Semiconductor Physics held in 2013 in Saint Petersburg and the 32nd International Conference on Semiconductor Physics held in 2014 in Austin (Texas, USA) are analyzed. The main features of the present conference are indicated, the most interesting lines of research, in my view, are presented.
Received: 24.11.2015 Accepted: 30.11.2015
Citation:
D. R. Khokhlov, “Summary of the 12th Russian Conference on Semiconductor Physics (Ershovo, Zvenigorod, Moscow, September 20–25, 2015)”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 721–724; Semiconductors, 50:6 (2016), 705–708
Linking options:
https://www.mathnet.ru/eng/phts6429 https://www.mathnet.ru/eng/phts/v50/i6/p721
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