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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 4, Pages 549–552 (Mi phts6499)  
This article is cited in 4 scientific papers (total in 4 papers)

Manufacturing, processing, testing of materials and structures

On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy

Sh. Sh. Sharofidinovab, V. I. Nikolaevabc, A. N. Smirnovb, A. V. Chikiryakab, I. P. Nikitinab, M. A. Odnoblyudovd, V. E. Bugrova, A. E. Romanovab

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b Ioffe Institute, St. Petersburg
c OOO Perfect Crystals, St. Petersburg, Russia
d St. Petersburg Polytechnic University
Full-text PDF (379 kB) Citations (4)
URL: https://journals.ioffe.ru/ftp/2016/04/page-549.html.ru
Abstract: The main problem of the epitaxial growth of thick AlN layers on a Si substrate consists in the formation of cracks, which complicates the application of structures of this kind in the fabrication of semiconductor devices. The possibility of obtaining crack-free AlN layers with a thickness exceeding 1 $\mu$m and a mirror- smooth surface by hydride vapor-phase epitaxy is demonstrated. The properties of the layers are studied by X-diffraction analysis, optical and scanning electron microscopy, and Raman spectroscopy.
Keywords: Aluminum Nitride, Epitaxial Lateral Overgrowth, Phonon Line, Heteroepitaxial Growth, Tensile Elastic Stress.
Received: 07.07.2015
Accepted: 17.07.2015
English version:
Semiconductors, 2016, Volume 50, Issue 4, Pages 541–544
DOI: https://doi.org/10.1134/S1063782616040217
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Sh. Sh. Sharofidinov, V. I. Nikolaev, A. N. Smirnov, A. V. Chikiryaka, I. P. Nikitina, M. A. Odnoblyudov, V. E. Bugrov, A. E. Romanov, “On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 549–552; Semiconductors, 50:4 (2016), 541–544
Citation in format AMSBIB
\Bibitem{ShaNikSmi16}
\by Sh.~Sh.~Sharofidinov, V.~I.~Nikolaev, A.~N.~Smirnov, A.~V.~Chikiryaka, I.~P.~Nikitina, M.~A.~Odnoblyudov, V.~E.~Bugrov, A.~E.~Romanov
\paper On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 4
\pages 549--552
\mathnet{http://mi.mathnet.ru/phts6499}
\elib{https://elibrary.ru/item.asp?id=25668284}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 4
\pages 541--544
\crossref{https://doi.org/10.1134/S1063782616040217}
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  • https://www.mathnet.ru/eng/phts/v50/i4/p549
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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