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Micro- and nanocrystalline, porous, composite semiconductors
Water – a source electrically active centres in CdHgTe
Yu. G. Sidorov, G. Yu. Sidorov, V. S. Varavin Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
Abstract:
Influence of water solutions with various pH and electrochemical treatment in cathode position on concentration of charge carriers in samples Cd$_x$Hg$_{1-x}$Te with $x$ = 0.2–0.3 is investigated. Cathodic treatment cadmium-mercury- tellurium at small density current increases concentration of donors, and at high density acceptors are formed. It is supposed that hydroxyl groups create acceptors centers, introduce in interstitial cadmium-mercury-tellurium. At treatment for a long time (it is more than 20 h) or acceptors are formed with concentration at level of 10$^{16}$ cm$^{-3}$ (at high activity of hydrogen), or donors with concentration of 10$^{14}$ cm$^{-3}$ (at low activity of hydrogen) are uniform distribution on all thickness of cadmium-mercurytellurium film and does not vary with the subsequent increase in time of treatment.
Keywords:
CdHgTe, electrochemical treatment, acceptors, activity of hydrogen.
Received: 04.10.2022 Revised: 10.01.2023 Accepted: 06.03.2023
Citation:
Yu. G. Sidorov, G. Yu. Sidorov, V. S. Varavin, “Water – a source electrically active centres in CdHgTe”, Fizika i Tekhnika Poluprovodnikov, 57:2 (2023), 114–119
Linking options:
https://www.mathnet.ru/eng/phts6843 https://www.mathnet.ru/eng/phts/v57/i2/p114
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