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Fizika i Tekhnika Poluprovodnikov, 2022, Volume 56, Issue 6, Pages 576–579
DOI: https://doi.org/10.21883/FTP.2022.06.52592.9819
(Mi phts7062)
 

Micro- and nanocrystalline, porous, composite semiconductors

Multilayer sensor structure based on porous silicon

V. V. Bolotov, E. V. Knyazev, I. V. Ponomareva, K. E. Ivlev

Omsk Scientific Center, Siberian Branch of the Russian Academy of Sciences, 644024 Omsk, Russia
Abstract: The work is devoted to the creation of a sensor structure based on a porous silicon membrane. The structure under study integrates a porous layer used as a gas transport layer and a gas sensitive layer of non-stoichiometric tin oxide. The paper investigates the morphology of the structure and shows the gas permeability of the membrane on porous silicon. The gas sensitivity of the test structure obtained by passing a gas-air mixture containing NO$_2$ has been studied.
Keywords: porous silicon, membrane, non-stoichiometric tin oxide, thin films, resistive gas sensor.
Funding agency Grant number
Ministry of Science and Higher Education of the Russian Federation 121021600004-7
The work has been performed under the state assignment from Omsk Scientific Center of the Siberian Branch of RAS (project state registration number 121021600004-7).
Received: 24.02.2022
Revised: 02.03.2022
Accepted: 02.03.2022
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Bolotov, E. V. Knyazev, I. V. Ponomareva, K. E. Ivlev, “Multilayer sensor structure based on porous silicon”, Fizika i Tekhnika Poluprovodnikov, 56:6 (2022), 576–579
Citation in format AMSBIB
\Bibitem{BolKnyPon22}
\by V.~V.~Bolotov, E.~V.~Knyazev, I.~V.~Ponomareva, K.~E.~Ivlev
\paper Multilayer sensor structure based on porous silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2022
\vol 56
\issue 6
\pages 576--579
\mathnet{http://mi.mathnet.ru/phts7062}
\crossref{https://doi.org/10.21883/FTP.2022.06.52592.9819}
\elib{https://elibrary.ru/item.asp?id=49222836}
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  • https://www.mathnet.ru/eng/phts/v56/i6/p576
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