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Micro- and nanocrystalline, porous, composite semiconductors
Multilayer sensor structure based on porous silicon
V. V. Bolotov, E. V. Knyazev, I. V. Ponomareva, K. E. Ivlev Omsk Scientific Center, Siberian Branch of the Russian Academy of Sciences, 644024 Omsk, Russia
Abstract:
The work is devoted to the creation of a sensor structure based on a porous silicon membrane. The structure under study integrates a porous layer used as a gas transport layer and a gas sensitive layer of non-stoichiometric tin oxide. The paper investigates the morphology of the structure and shows the gas permeability of the membrane on porous silicon. The gas sensitivity of the test structure obtained by passing a gas-air mixture containing NO$_2$ has been studied.
Keywords:
porous silicon, membrane, non-stoichiometric tin oxide, thin films, resistive gas sensor.
Received: 24.02.2022 Revised: 02.03.2022 Accepted: 02.03.2022
Citation:
V. V. Bolotov, E. V. Knyazev, I. V. Ponomareva, K. E. Ivlev, “Multilayer sensor structure based on porous silicon”, Fizika i Tekhnika Poluprovodnikov, 56:6 (2022), 576–579
Linking options:
https://www.mathnet.ru/eng/phts7062 https://www.mathnet.ru/eng/phts/v56/i6/p576
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