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Fizika i Tekhnika Poluprovodnikov, 2022, Volume 56, Issue 10, Pages 1002–1010
DOI: https://doi.org/10.21883/FTP.2022.10.53963.9951 (Mi phts7139) 		 
Semiconductor physics

Study of active regions based on multiperiod GaAsN/InAs superlattice

A. V. Babicheva, E. V. Pirogovb, M. S. Sobolevb, D. V. Denisovb, N. A. Fominykhbc, A. I. Baranovb, A. S. Gudovskikhb, I. A. Melnichenkobc, P. A. Yunind, V. N. Nevedomskiye, M. V. Tokareve, B. Ya. Bere, A. G. Gladysheva, L. Ya. Karachinskya, I. I. Novikova, A. Yu. Egorovb

a ITMO University, 197101 St. Petersburg, Russia
b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St. Petersburg, Russia
c National Research University "Higher School of Economics", St. Petersburg Branch, 190008 St. Petersburg, Russia
d Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
e Ioffe Institute, 194021 St. Petersburg, Russia
Full-text PDF (1276 kB)
DOI: https://doi.org/10.21883/FTP.2022.10.53963.9951
Abstract: The results of a study of nitrogen-containing active regions based on superlattices grown on GaAs substrates are presented. Active regions based on alternating InAs and GaAsN layers were fabricated by molecular-beam epitaxy using a nitrogen plasma source. Based on the XRD analysis, the thicknesses and average composition of superlattice layers are estimated. The study of dark-field images obtained by transmission electron microscopy showed the presence of interdiffusion of InAs into GaAsN. The results of a study of the photoluminescence and electroluminescence spectra at different pump levels are presented. Efficient electroluminescence is demonstrated near 1150 nm with a full width at half-maximum of about $\sim$90 meV.
Keywords: superlattices, molecular beam epitaxy, gallium arsenide, dilute nitride, GaAsN, InAs.
Funding agency Grant number
Russian Science Foundation 21-19-00718
Program of Strategic Academic Leadership Prioritet-2030
National Research University Higher School of Economics
The work of the authors from the Alferov University was carried out at the expense of a grant from the Russian Science Foundation (project No. 21-19-00718) in terms of design development, epitaxy of heterostructures, TEM and SIMS studies, studies of electroluminescent properties. The work of the authors from ITMO University was carried out with the financial support of the “Priority 2030” program in terms of the study of X-ray diffraction curves. I.A. Melnichenko and N.A. Fominykh are grateful for the support of the Fundamental Research Program of the National Research University “Higher School of Economics” regarding the analysis of photoluminescence spectra.
Received: 23.08.2022
Revised: 26.09.2022
Accepted: 26.09.2022
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Babichev, E. V. Pirogov, M. S. Sobolev, D. V. Denisov, N. A. Fominykh, A. I. Baranov, A. S. Gudovskikh, I. A. Melnichenko, P. A. Yunin, V. N. Nevedomskiy, M. V. Tokarev, B. Ya. Ber, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov, “Study of active regions based on multiperiod GaAsN/InAs superlattice”, Fizika i Tekhnika Poluprovodnikov, 56:10 (2022), 1002–1010
Citation in format AMSBIB
\Bibitem{BabPirSob22}
\by A.~V.~Babichev, E.~V.~Pirogov, M.~S.~Sobolev, D.~V.~Denisov, N.~A.~Fominykh, A.~I.~Baranov, A.~S.~Gudovskikh, I.~A.~Melnichenko, P.~A.~Yunin, V.~N.~Nevedomskiy, M.~V.~Tokarev, B.~Ya.~Ber, A.~G.~Gladyshev, L.~Ya.~Karachinsky, I.~I.~Novikov, A.~Yu.~Egorov
\paper Study of active regions based on multiperiod GaAsN/InAs superlattice
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2022
\vol 56
\issue 10
\pages 1002--1010
\mathnet{http://mi.mathnet.ru/phts7139}
\crossref{https://doi.org/10.21883/FTP.2022.10.53963.9951}
\elib{https://elibrary.ru/item.asp?id=49988311}
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