Raman spectroscopy of InGaAs/GaAs nanoheterostructures $\delta$-doped with Mn

The results of complex studies of InGaAs/GaAs nanoheterostructures $\delta$-doped with Mn are reported. The structures are grown by metal-organic vapor-phase epitaxy in combination with laser deposition. By confocal Raman spectroscopy, it is shown that the low-temperature $\delta$-doped GaAs cap layers are of higher crystal quality compared to uniformly doped layers. Scattering of light in the coupled phonon-plasmon mode is observed. The appearance of this mode is conditioned by the diffusion of manganese from the $\delta$-layer. The thickness of the cap layer is found to be $d_c\approx$ 9–20 nm, optimal for attainment of the highest photoluminescence intensity of the quantum well and the highest layer concentration of holes by doping with manganese.