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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 2, Pages 145–148 (Mi phts7201)  
XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures

N. S. Volkovaa, A. P. Gorshkova, S. V. Tikhova, N. V. Baidusb, S. V. Khazanovaa, V. E. Degtyarova, D. O. Filatovb

a Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Full-text PDF (152 kB)
Abstract: The photosensitivity, photoluminescence, and electroluminescence spectra of InGaAs/GaAs diode nanoheterostructures with a Si $\delta$ layer formed at a distance of 10 nm from the InGaAs quantum well are studied. The influence of the arrangement of the $\delta$ layer with respect to the quantum well on the optoelectronic properties of the structures is established.
Received: 23.05.2014
Accepted: 15.06.2014
English version:
Semiconductors, 2015, Volume 49, Issue 2, Pages 139–142
DOI: https://doi.org/10.1134/S1063782615020232
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. S. Volkova, A. P. Gorshkov, S. V. Tikhov, N. V. Baidus, S. V. Khazanova, V. E. Degtyarov, D. O. Filatov, “Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 145–148; Semiconductors, 49:2 (2015), 139–142
Citation in format AMSBIB
\Bibitem{VolGorTik15}
\by N.~S.~Volkova, A.~P.~Gorshkov, S.~V.~Tikhov, N.~V.~Baidus, S.~V.~Khazanova, V.~E.~Degtyarov, D.~O.~Filatov
\paper Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 2
\pages 145--148
\mathnet{http://mi.mathnet.ru/phts7201}
\elib{https://elibrary.ru/item.asp?id=24195083}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 2
\pages 139--142
\crossref{https://doi.org/10.1134/S1063782615020232}
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