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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 2, Pages 230–235 (Mi phts7215)  
This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers

D. V. Gulyaeva, K. S. Zhuravlevab, A. K. Bakarovab, A. I. Toropova

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Full-text PDF (188 kB) Citations (3)
Abstract: The photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor heterostructures with donor-acceptor-doped AlGaAs barriers is studied. It is found that the introduction of additional $p^+$-doped AlGaAs layers into the design brings about the appearance of new bands in the photoluminescence spectra. These bands are identified as resulting from transitions (i) in donor-acceptor pairs in doped AlGaAs layers and (ii) between the conduction subband and acceptor levels in the undoped InGaAs quantum well.
Received: 23.05.2014
Accepted: 09.06.2014
English version:
Semiconductors, 2015, Volume 49, Issue 2, Pages 224–228
DOI: https://doi.org/10.1134/S1063782615020104
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. V. Gulyaev, K. S. Zhuravlev, A. K. Bakarov, A. I. Toropov, “Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 230–235; Semiconductors, 49:2 (2015), 224–228
Citation in format AMSBIB
\Bibitem{GulZhuBak15}
\by D.~V.~Gulyaev, K.~S.~Zhuravlev, A.~K.~Bakarov, A.~I.~Toropov
\paper Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 2
\pages 230--235
\mathnet{http://mi.mathnet.ru/phts7215}
\elib{https://elibrary.ru/item.asp?id=24195097}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 2
\pages 224--228
\crossref{https://doi.org/10.1134/S1063782615020104}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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