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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 2, Pages 254–260
(Mi phts7219)
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This article is cited in 7 scientific papers (total in 7 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites
K. G. Belyaev, A. A. Usikova, V. N. Zhmerik, P. S. Kop'ev, S. V. Ivanov, A. A. Toropov, P. N. Brunkov Ioffe Institute, St. Petersburg
Abstract:
A significant (by up to a factor of 7) increase in the internal quantum efficiency of luminescence is achieved at room temperature in semiconductor-metal-insulator hybrid structures fabricated by the successive deposition of gold and Si$_3$N$_4$ over an array of InGaN nanoblocks, grown by molecular-beam epitaxy. The observed effect can be accounted for by the resonant interaction of excitons localized in InGaN nanoblocks with localized surface-plasmon modes in gold intrusions embedded into InGaN and Si$_3$N$_4$.
Received: 12.06.2014 Accepted: 08.07.2014
Citation:
K. G. Belyaev, A. A. Usikova, V. N. Zhmerik, P. S. Kop'ev, S. V. Ivanov, A. A. Toropov, P. N. Brunkov, “Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 254–260; Semiconductors, 49:2 (2015), 247–253
Linking options:
https://www.mathnet.ru/eng/phts7219 https://www.mathnet.ru/eng/phts/v49/i2/p254
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