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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 10, Pages 1351–1354
(Mi phts7407)
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This article is cited in 1 scientific paper (total in 1 paper)
Surface, interfaces, thin films
On the charge neutrality level and the electronic properties of interphase boundaries in the layered $\varepsilon$-GaSe semiconductor
V. N. Brudnyia, S. Yu. Sarkisova, A. V. Kosobutskyab a Tomsk State University
b Kemerovo State University
Abstract:
The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(0001)/Si(111) heteropairs are analyzed within the context of the concept of the charge neutrality level, $CNL_{vb}$(GaSe) = $E_v$ + 0.83 eV, with consideration for partial screening of the interface electrostatic dipole by metal- or semiconductor-induced tunneling states at the GaSe(0001) surface.
Received: 03.03.2015 Accepted: 09.03.2015
Citation:
V. N. Brudnyi, S. Yu. Sarkisov, A. V. Kosobutsky, “On the charge neutrality level and the electronic properties of interphase boundaries in the layered $\varepsilon$-GaSe semiconductor”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1351–1354; Semiconductors, 49:10 (2015), 1307–1310
Linking options:
https://www.mathnet.ru/eng/phts7407 https://www.mathnet.ru/eng/phts/v49/i10/p1351
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