Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity $\delta$-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting $(n^+)$ and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of $\le$ 30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the $\delta$-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.