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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 11, Pages 1558–1562
(Mi phts7445)
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This article is cited in 7 scientific papers (total in 7 papers)
Semiconductor physics
Dynamic characteristics of 4H-SiC drift step recovery diodes
P. A. Ivanov, O. I. Kon'kov, T. P. Samsonova, A. S. Potapov, I. V. Grekhov Ioffe Institute, St. Petersburg
Abstract:
The dynamic characteristics of 4H-SiC $p^+$–$p$–$n_0$–$n^+$ diodes are experimentally studied in the pulsed modes characteristic of the operation of drift step recovery diodes (DSRD-mode). The effect of the subnanosecond termination of the reverse current maintained by electron-hole plasma preliminarily pumped by a forward current pulse is analyzed in detail. The influence exerted on the DSRD effect by the amplitude of reverse-voltage pulses, the amplitude and duration of forward-current pulses, and the time delay between the forward and reverse pulses is demonstrated and accounted for.
Received: 22.04.2015 Accepted: 06.05.2015
Citation:
P. A. Ivanov, O. I. Kon'kov, T. P. Samsonova, A. S. Potapov, I. V. Grekhov, “Dynamic characteristics of 4H-SiC drift step recovery diodes”, Fizika i Tekhnika Poluprovodnikov, 49:11 (2015), 1558–1562; Semiconductors, 49:11 (2015), 1511–1515
Linking options:
https://www.mathnet.ru/eng/phts7445 https://www.mathnet.ru/eng/phts/v49/i11/p1558
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