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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 12, Pages 1619–1622
(Mi phts7455)
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This article is cited in 1 scientific paper (total in 1 paper)
XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015
Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides
I. V. Samartseva, V. Ya. Aleshkinb, N. V. Dikarevaa, A. A. Dubinovbc, B. N. Zvonkova, D. A. Kolpakova, S. M. Nekorkina a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
c Lobachevsky State University of Nizhny Novgorod
Abstract:
The optimization of InGaP/GaAs/InGaAs laser structures with tunnel-coupled waveguides with the aim of reducing the directivity diagram is presented. The width of the directivity diagram in the plane normal to the $p$–$n$ junction is reduced to 28$^\circ$ in the lasers produced.
Received: 22.04.2015 Accepted: 12.05.2015
Citation:
I. V. Samartsev, V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, D. A. Kolpakov, S. M. Nekorkin, “Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides”, Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1619–1622; Semiconductors, 49:12 (2015), 1571–1574
Linking options:
https://www.mathnet.ru/eng/phts7455 https://www.mathnet.ru/eng/phts/v49/i12/p1619
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