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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 3, Pages 384–387 (Mi phts7542)  

This article is cited in 12 scientific papers (total in 12 papers)

Semiconductor physics

Optimization of carrier mobility in luminescence layers based on europium $\beta$

M. A. Bochkova, A. G. Vitukhnovskya, I. V. Taidakova, A. A. Vashchenkoa, A. V. Katsabaa, S. A. Ambrozevicha, P. N. Brunkovb

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Ioffe Institute, St. Petersburg
Abstract: The hole conductivity in films of three compounds, complexes based on europium $\beta$-diketonates, deposited by vacuum evaporation is studied by the time-of-flight technique. It is shown that no carrier photogeneration is observed in films under pulsed excitation with 337 nm light. The introduction of pentacene-based photogeneration layers into the samples made it possible to observe transient-current curves. It was found that a dispersive component of the transient current, associated with hole transport, is observed in a complex of europium with an auxiliary ligand based on bathophenanthroline. These data were used to determine the hole mobility. No dispersive component of the transient current was observed in complexes with an auxiliary ligand based on phenanthroline. A conclusion is made that the latter is due to the low mobility in compounds of this kind. This is attributed to a decrease in the degree of conjugation of the aromatic system, which occurs on passing from bathophenanthroline to phenanthroline.
Received: 11.06.2013
Accepted: 24.06.2013
English version:
Semiconductors, 2014, Volume 48, Issue 3, Pages 369–372
DOI: https://doi.org/10.1134/S1063782614030051
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. A. Bochkov, A. G. Vitukhnovsky, I. V. Taidakov, A. A. Vashchenko, A. V. Katsaba, S. A. Ambrozevich, P. N. Brunkov, “Optimization of carrier mobility in luminescence layers based on europium $\beta$”, Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 384–387; Semiconductors, 48:3 (2014), 369–372
Citation in format AMSBIB
\Bibitem{BocVitTai14}
\by M.~A.~Bochkov, A.~G.~Vitukhnovsky, I.~V.~Taidakov, A.~A.~Vashchenko, A.~V.~Katsaba, S.~A.~Ambrozevich, P.~N.~Brunkov
\paper Optimization of carrier mobility in luminescence layers based on europium $\beta$
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 3
\pages 384--387
\mathnet{http://mi.mathnet.ru/phts7542}
\elib{https://elibrary.ru/item.asp?id=21310752}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 3
\pages 369--372
\crossref{https://doi.org/10.1134/S1063782614030051}
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  • https://www.mathnet.ru/eng/phts/v48/i3/p384
  • This publication is cited in the following 12 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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