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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 3, Pages 388–391 (Mi phts7543)  
This article is cited in 7 scientific papers (total in 7 papers)

Semiconductor physics

Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm

V. V. Shamakhov, A. V. Lyutetskiy, K. Bakhvalov, I. S. Shashkin, M. G. Rastegaeva, S. O. Slipchenko, N. A. Pikhtin, I. S. Tarasov

Ioffe Institute, St. Petersburg
Full-text PDF (277 kB) Citations (7)
Abstract: Two types of laser heterostructures, i.e., those without internal mechanical stress compensation, with AlGaAs-alloy emitter and waveguide layers (type 1), and laser heterostructures with stress compensation, with AlGaAsP emitter and waveguide layers (type 2) are grown by metal-organic chemical vapor deposition (MOCVD). Laser-diode bars 5 mm wide with a fill factor of 24%, emitting at a wavelength of 850 nm are fabricated. Their power parameters in the continuous-wave (cw) and pulsed lasing modes are studied. It is shown that type-2 laser diode bars exhibit better linearity of the light-current characteristics in the cw and pulsed lasing modes in comparison with laser diode bars based on the type-1 structure.
Received: 17.06.2014
Accepted: 24.06.2014
English version:
Semiconductors, 2014, Volume 48, Issue 3, Pages 373–376
DOI: https://doi.org/10.1134/S1063782614030233
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Shamakhov, A. V. Lyutetskiy, K. Bakhvalov, I. S. Shashkin, M. G. Rastegaeva, S. O. Slipchenko, N. A. Pikhtin, I. S. Tarasov, “Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm”, Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 388–391; Semiconductors, 48:3 (2014), 373–376
Citation in format AMSBIB
\Bibitem{ShaLyuBak14}
\by V.~V.~Shamakhov, A.~V.~Lyutetskiy, K.~Bakhvalov, I.~S.~Shashkin, M.~G.~Rastegaeva, S.~O.~Slipchenko, N.~A.~Pikhtin, I.~S.~Tarasov
\paper Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 3
\pages 388--391
\mathnet{http://mi.mathnet.ru/phts7543}
\elib{https://elibrary.ru/item.asp?id=21310753}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 3
\pages 373--376
\crossref{https://doi.org/10.1134/S1063782614030233}
Linking options:
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  • https://www.mathnet.ru/eng/phts/v48/i3/p388
    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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