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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 5, Pages 610–615
(Mi phts7583)
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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor structures, low-dimensional systems, quantum phenomena
On the transmission channels and current-voltage characteristics of a double-barrier nanostructure driven by dc electric and electromagnetic fields of arbitrary strength
N. V. Tkach, J. A. Seti Chernivtsi National University named after Yuriy Fedkovych
Abstract:
A theory of the transmission channels and current-voltage characteristics of a double-barrier resonant tunneling structure driven by dc electric and high-frequency electromagnetic fields of arbitrary strength is proposed based on an obtained exact solution to the complete one-dimensional Schrödinger equation. It is shown for the first time that an increase in the electromagnetic-field strength leads (as a result of the formation of nonresonant transmission channels in the nanostructure) to a change in its current-voltage characteristic from a single-humped to double-humped curve not only in the vicinities of the electron-resonance energies but also in the energy ranges corresponding to the superpositions of pairs of field satellite states.
Received: 26.11.2012 Accepted: 03.12.2013
Citation:
N. V. Tkach, J. A. Seti, “On the transmission channels and current-voltage characteristics of a double-barrier nanostructure driven by dc electric and electromagnetic fields of arbitrary strength”, Fizika i Tekhnika Poluprovodnikov, 48:5 (2014), 610–615; Semiconductors, 48:5 (2014), 590–595
Linking options:
https://www.mathnet.ru/eng/phts7583 https://www.mathnet.ru/eng/phts/v48/i5/p610
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