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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 5, Pages 610–615 (Mi phts7583)  

This article is cited in 1 scientific paper (total in 1 paper)

Semiconductor structures, low-dimensional systems, quantum phenomena

On the transmission channels and current-voltage characteristics of a double-barrier nanostructure driven by dc electric and electromagnetic fields of arbitrary strength

N. V. Tkach, J. A. Seti

Chernivtsi National University named after Yuriy Fedkovych
Full-text PDF (184 kB) Citations (1)
Abstract: A theory of the transmission channels and current-voltage characteristics of a double-barrier resonant tunneling structure driven by dc electric and high-frequency electromagnetic fields of arbitrary strength is proposed based on an obtained exact solution to the complete one-dimensional Schrödinger equation. It is shown for the first time that an increase in the electromagnetic-field strength leads (as a result of the formation of nonresonant transmission channels in the nanostructure) to a change in its current-voltage characteristic from a single-humped to double-humped curve not only in the vicinities of the electron-resonance energies but also in the energy ranges corresponding to the superpositions of pairs of field satellite states.
Received: 26.11.2012
Accepted: 03.12.2013
English version:
Semiconductors, 2014, Volume 48, Issue 5, Pages 590–595
DOI: https://doi.org/10.1134/S1063782614050236
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. V. Tkach, J. A. Seti, “On the transmission channels and current-voltage characteristics of a double-barrier nanostructure driven by dc electric and electromagnetic fields of arbitrary strength”, Fizika i Tekhnika Poluprovodnikov, 48:5 (2014), 610–615; Semiconductors, 48:5 (2014), 590–595
Citation in format AMSBIB
\Bibitem{TkaSet14}
\by N.~V.~Tkach, J.~A.~Seti
\paper On the transmission channels and current-voltage characteristics of a double-barrier nanostructure driven by dc electric and electromagnetic fields of arbitrary strength
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 5
\pages 610--615
\mathnet{http://mi.mathnet.ru/phts7583}
\elib{https://elibrary.ru/item.asp?id=22018835}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 5
\pages 590--595
\crossref{https://doi.org/10.1134/S1063782614050236}
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  • https://www.mathnet.ru/eng/phts/v48/i5/p610
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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