Magnetoresistance of layered semiconductors upon the scattering of charge carriers at impurity ions in a parallel magnetic field

The magnetoresistance of a semiconductor superlattice in a magnetic field directed perpendicular to its axis for the case of the scattering of charge carriers at impurity ions is calculated. It is demonstrated that the sign of the transverse magnetoresistance strongly depends on the band filling factor, the value of the magnetic field, and the ratios between the screening radius, cyclotron orbital radius, and superlattice constant. In a parallel magnetic field, the transverse magnetoresistance of a two-dimensional electron gas is positive in a strong field and negative in a weak field. The transverse magnetoresistance of a quasi-two-dimensional electron gas changes its sign due to the presence of a negative effective mass region in the miniband.