Use of double-layer ITO films in reflective contacts for blue and near-UV LEDs

The structural and optical properties of multilayer ITO/SiO$_2$/Ag composites are studied. In these composites, the ITO (indium-tin oxide) layer is produced by two different methods: electron-beam evaporation and a combined method including electron-beam evaporation and subsequent magnetron sputtering. It is shown that the reflectance of the composite based on the ITO film produced by electron-beam evaporation is substantially lower. This can be attributed to the strong absorption of light at both boundaries of the SiO$_2$ layer, which results from the complex surface profile of ITO films deposited by electron-beam evaporation. Samples with a film deposited by the combined method have a reflectance of about 90% at normal light incidence, which, combined with their higher electrical conductivity, makes these samples advantageous for use as reflective contacts to the $p$-type region of AlInGaN light-emitting diodes of the flip-chip design.