Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 1, Pages 9–14 (Mi phts7795)  

This article is cited in 7 scientific papers (total in 7 papers)

Non-electronic properties of semiconductors (atomic structure, diffusion)

Properties of epitaxial (Al$_x$Ga$_{1-x}$As)$_{1-y}$C$_y$ alloys grown by MOCVD autoepitaxy

P. V. Seredina, È. P. Domashevskayaa, I. N. Arsent'evb, D. A. Vinokurovb, A. L. Stankevichb

a Voronezh State University
b Ioffe Institute, St. Petersburg
Full-text PDF (330 kB) Citations (7)
Abstract: The growth of epitaxial Al$_x$Ga$_{1-x}$As:C alloys by metal-organic chemical vapor deposition (MOCVD) at low temperatures results in the formation of quaternary (Al$_x$Ga$_{1-x}$As)$_{1-y}$C$_y$ alloys, in which carbon atoms can be concentrated at lattice defects in the epitaxial alloy with the formation of impurity nanoclusters.
Received: 11.04.2012
Accepted: 25.04.2012
English version:
Semiconductors, 2013, Volume 47, Issue 1, Pages 7–12
DOI: https://doi.org/10.1134/S1063782613010211
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. V. Seredin, È. P. Domashevskaya, I. N. Arsent'ev, D. A. Vinokurov, A. L. Stankevich, “Properties of epitaxial (Al$_x$Ga$_{1-x}$As)$_{1-y}$C$_y$ alloys grown by MOCVD autoepitaxy”, Fizika i Tekhnika Poluprovodnikov, 47:1 (2013), 9–14; Semiconductors, 47:1 (2013), 7–12
Citation in format AMSBIB
\Bibitem{SerDomArs13}
\by P.~V.~Seredin, \`E.~P.~Domashevskaya, I.~N.~Arsent'ev, D.~A.~Vinokurov, A.~L.~Stankevich
\paper Properties of epitaxial (Al$_x$Ga$_{1-x}$As)$_{1-y}$C$_y$ alloys grown by MOCVD autoepitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 1
\pages 9--14
\mathnet{http://mi.mathnet.ru/phts7795}
\elib{https://elibrary.ru/item.asp?id=20319332}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 1
\pages 7--12
\crossref{https://doi.org/10.1134/S1063782613010211}
Linking options:
  • https://www.mathnet.ru/eng/phts7795
  • https://www.mathnet.ru/eng/phts/v47/i1/p9
  • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025