|
|
Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 1, Pages 9–14
(Mi phts7795)
|
|
|
|
This article is cited in 7 scientific papers (total in 7 papers)
Non-electronic properties of semiconductors (atomic structure, diffusion)
Properties of epitaxial (Al$_x$Ga$_{1-x}$As)$_{1-y}$C$_y$ alloys grown by MOCVD autoepitaxy
P. V. Seredina, È. P. Domashevskayaa, I. N. Arsent'evb, D. A. Vinokurovb, A. L. Stankevichb a Voronezh State University
b Ioffe Institute, St. Petersburg
Abstract:
The growth of epitaxial Al$_x$Ga$_{1-x}$As:C alloys by metal-organic chemical vapor deposition (MOCVD) at low temperatures results in the formation of quaternary (Al$_x$Ga$_{1-x}$As)$_{1-y}$C$_y$ alloys, in which carbon atoms can be concentrated at lattice defects in the epitaxial alloy with the formation of impurity nanoclusters.
Received: 11.04.2012 Accepted: 25.04.2012
Citation:
P. V. Seredin, È. P. Domashevskaya, I. N. Arsent'ev, D. A. Vinokurov, A. L. Stankevich, “Properties of epitaxial (Al$_x$Ga$_{1-x}$As)$_{1-y}$C$_y$ alloys grown by MOCVD autoepitaxy”, Fizika i Tekhnika Poluprovodnikov, 47:1 (2013), 9–14; Semiconductors, 47:1 (2013), 7–12
Linking options:
https://www.mathnet.ru/eng/phts7795 https://www.mathnet.ru/eng/phts/v47/i1/p9
|
|