|
|
Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 1, Pages 68–74
(Mi phts7805)
|
|
|
|
This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
On the theory of the photoelectric effect in surface-graded-gap semiconductors
V. A. Kholodnov Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow
Abstract:
A correct mathematical model of interband carrier photogeneration by low-intensity optical radiation in surface-graded-gap semiconductors is constructed and analytically considered for the case of strong, including step-like, variations in the graded-gap field in the transition region adjacent to the homogeneous layer. The dependence of the degree of the blocking of surface-photocarrier recombination on the parameters of the graded-gap surface layer is analyzed. The conditions for achieving the limiting efficiency of the photoelectric response of semiconductors to low-intensity optical radiation due to the graded-gap surface layer are determined.
Received: 23.03.2012 Accepted: 05.06.2012
Citation:
V. A. Kholodnov, “On the theory of the photoelectric effect in surface-graded-gap semiconductors”, Fizika i Tekhnika Poluprovodnikov, 47:1 (2013), 68–74; Semiconductors, 47:1 (2013), 66–72
Linking options:
https://www.mathnet.ru/eng/phts7805 https://www.mathnet.ru/eng/phts/v47/i1/p68
|
|