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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 2, Pages 182–191 (Mi phts7822)  
This article is cited in 9 scientific papers (total in 9 papers)

IX International Conference ''Silicon-2012'', St. Petersburg, July 9-13, 2012

Radiation effects in Si–Ge quantum size structures (review)

N. A. Sobolev

Departamento de Fisica & I3N, Universidade de Aveiro, 3810-193, Aveiro, Portugal
Full-text PDF (1467 kB) Citations (9)
Abstract: The article is dedicated to the review and analysis of the effects and processes occurring in Si–Ge quantum size semiconductor structures upon particle irradiation including ion implantation. Comparisons to bulk materials are drawn. The reasons of the enhanced radiation hardness of superlattices and quantum dots are elucidated. Some technological applications of the radiation treatment are reviewed.
Received: 17.07.2012
Accepted: 20.07.2012
English version:
Semiconductors, 2013, Volume 47, Issue 2, Pages 217–227
DOI: https://doi.org/10.1134/S1063782613020188
Bibliographic databases:
Document Type: Article
Language: English
Citation: N. A. Sobolev, “Radiation effects in Si–Ge quantum size structures (review)”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 182–191; Semiconductors, 47:2 (2013), 217–227
Citation in format AMSBIB
\Bibitem{Sob13}
\by N.~A.~Sobolev
\paper Radiation effects in Si--Ge quantum size structures (review)
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 2
\pages 182--191
\mathnet{http://mi.mathnet.ru/phts7822}
\elib{https://elibrary.ru/item.asp?id=20319360}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 2
\pages 217--227
\crossref{https://doi.org/10.1134/S1063782613020188}
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  • https://www.mathnet.ru/eng/phts/v47/i2/p182
    • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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