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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 2, Pages 195–198 (Mi phts7824)  
This article is cited in 6 scientific papers (total in 6 papers)

IX International Conference ''Silicon-2012'', St. Petersburg, July 9-13, 2012

Influence of metal impurities on recombination activity of dislocations in multicrystalline silicon

O. V. Feklisovaa, X. Yub, D. Yangb, E. B. Yakimova

a Institute of Microelectronics Technology and High-Purity Materials RAS
b State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, 310027, China
Full-text PDF (763 kB) Citations (6)
Abstract: The influence of Fe, Cu, and Ni atoms introduced by means of high-temperature diffusion on the recombination properties of dislocations in multicrystalline silicon is investigated by the electron-beam induced-current (EBIC) method. It is shown that the influence of all three impurities is qualitatively similar. Recombination activity of dislocations remains lower than the detection limit in the EBIC mode both for starting samples and after the diffusion of transition metals. The behavior of dislocations is interpreted under the assumption that dislocations are already impurity-saturated in starting samples.
Received: 17.07.2012
Accepted: 20.07.2012
English version:
Semiconductors, 2013, Volume 47, Issue 2, Pages 232–234
DOI: https://doi.org/10.1134/S1063782613020097
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. V. Feklisova, X. Yu, D. Yang, E. B. Yakimov, “Influence of metal impurities on recombination activity of dislocations in multicrystalline silicon”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 195–198; Semiconductors, 47:2 (2013), 232–234
Citation in format AMSBIB
\Bibitem{FekYuYan13}
\by O.~V.~Feklisova, X.~Yu, D.~Yang, E.~B.~Yakimov
\paper Influence of metal impurities on recombination activity of dislocations in multicrystalline silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 2
\pages 195--198
\mathnet{http://mi.mathnet.ru/phts7824}
\elib{https://elibrary.ru/item.asp?id=20319362}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 2
\pages 232--234
\crossref{https://doi.org/10.1134/S1063782613020097}
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  • https://www.mathnet.ru/eng/phts/v47/i2/p195
    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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