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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 4, Pages 433–434 (Mi phts7867)  

This article is cited in 2 scientific papers (total in 2 papers)

Electronic properties of semiconductors

Experimental observation of giant Zeeman splitting of the light-hole level in a GaAs/AlGaAs quantum well

P. V. Petrov, Yu. L. Ivanov

Ioffe Institute, St. Petersburg
Full-text PDF (225 kB) Citations (2)
Abstract: The paramagnetic splitting of a light-hole level in a GaAs/AlGaAs quantum well is experimentally measured by the method of measuring the polarized photoluminescence in the magnetic field. The phenomenon of giant splitting, which was previously predicted theoretically and leads to an increase in the $g$ factor of a light hole to 9.4, is found.
Received: 25.09.2012
Accepted: 17.10.2012
English version:
Semiconductors, 2013, Volume 47, Issue 4, Pages 455–456
DOI: https://doi.org/10.1134/S1063782613040180
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. V. Petrov, Yu. L. Ivanov, “Experimental observation of giant Zeeman splitting of the light-hole level in a GaAs/AlGaAs quantum well”, Fizika i Tekhnika Poluprovodnikov, 47:4 (2013), 433–434; Semiconductors, 47:4 (2013), 455–456
Citation in format AMSBIB
\Bibitem{PetIva13}
\by P.~V.~Petrov, Yu.~L.~Ivanov
\paper Experimental observation of giant Zeeman splitting of the light-hole level in a GaAs/AlGaAs quantum well
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 4
\pages 433--434
\mathnet{http://mi.mathnet.ru/phts7867}
\elib{https://elibrary.ru/item.asp?id=20319405}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 4
\pages 455--456
\crossref{https://doi.org/10.1134/S1063782613040180}
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  • https://www.mathnet.ru/eng/phts/v47/i4/p433
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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