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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 4, Pages 433–434
(Mi phts7867)
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This article is cited in 2 scientific papers (total in 2 papers)
Electronic properties of semiconductors
Experimental observation of giant Zeeman splitting of the light-hole level in a GaAs/AlGaAs quantum well
P. V. Petrov, Yu. L. Ivanov Ioffe Institute, St. Petersburg
Abstract:
The paramagnetic splitting of a light-hole level in a GaAs/AlGaAs quantum well is experimentally measured by the method of measuring the polarized photoluminescence in the magnetic field. The phenomenon of giant splitting, which was previously predicted theoretically and leads to an increase in the $g$ factor of a light hole to 9.4, is found.
Received: 25.09.2012 Accepted: 17.10.2012
Citation:
P. V. Petrov, Yu. L. Ivanov, “Experimental observation of giant Zeeman splitting of the light-hole level in a GaAs/AlGaAs quantum well”, Fizika i Tekhnika Poluprovodnikov, 47:4 (2013), 433–434; Semiconductors, 47:4 (2013), 455–456
Linking options:
https://www.mathnet.ru/eng/phts7867 https://www.mathnet.ru/eng/phts/v47/i4/p433
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