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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 5, Pages 608–612 (Mi phts7895)  

This article is cited in 12 scientific papers (total in 12 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Resonant inelastic light scattering and photoluminescence in isolated nc-Si/SiO$_2$ quantum dots

F. D. Bairamovab, V. V. Toporova, E. D. Poloskina, B. H. Bairamova, C. Röderc, C. Sprungc, K. Bohmhammelc, J. Seidelc, G. Irmerc, A. Lashkuld, E. Lähderantad, Y. W. Songe

a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
c Institutre of Theoretical Physics, University of Mining and Technology, Freiberg, Germany
d Lappeenranta University of Technology, Lappeenranta, Finland
e Korea Polytechnic University, 2121, Jyndwang-dong, Siheungcity, Gyeonggi-do, 429-793, Korea
Abstract: Observation at the room temperature the spectra of the resonant inelastic light scattering by the spatially confined optical phonons as well as the excitonic luminescence caused by confinement effects in the ensemble of isolated quantum dots (QDs) nc-Si/SiO$_2$ is reported. It is shown that the samples investigated are high purity and high crystalline perfection quality nc-Si/SiO$_2$ QDs without amorphous phase $\alpha$-Si and contaminants. Comparison between the experimental data obtained and phenomenological model of the strong space confinement of optical phonons revealed the need of the more accurate form of the weighted function for the confinement of optical phonons. It is shown that simultaneous detection of the inelastic light scattering by the confinement of phonons and the excitonic luminescence spectra by the confined electron-hole pairs in the nc-Si/SiO$_2$ QDs allows selfconsistently to determine more accurate values of the diameter of the nc-Si/SiO$_2$ QDs.
Received: 17.07.2012
Accepted: 17.07.2012
English version:
Semiconductors, 2013, Volume 47, Issue 5, Pages 623–627
DOI: https://doi.org/10.1134/S106378261302005X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: F. D. Bairamov, V. V. Toporov, E. D. Poloskin, B. H. Bairamov, C. Röder, C. Sprung, K. Bohmhammel, J. Seidel, G. Irmer, A. Lashkul, E. Lähderanta, Y. W. Song, “Resonant inelastic light scattering and photoluminescence in isolated nc-Si/SiO$_2$ quantum dots”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 608–612; Semiconductors, 47:5 (2013), 623–627
Citation in format AMSBIB
\Bibitem{BayTopPol13}
\by F.~D.~Bairamov, V.~V.~Toporov, E.~D.~Poloskin, B.~H.~Bairamov, C.~R\"oder, C.~Sprung, K.~Bohmhammel, J.~Seidel, G.~Irmer, A.~Lashkul, E.~L\"ahderanta, Y.~W.~Song
\paper Resonant inelastic light scattering and photoluminescence in isolated nc-Si/SiO$_2$ quantum dots
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 5
\pages 608--612
\mathnet{http://mi.mathnet.ru/phts7895}
\elib{https://elibrary.ru/item.asp?id=20319434}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 5
\pages 623--627
\crossref{https://doi.org/10.1134/S106378261302005X}
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  • https://www.mathnet.ru/eng/phts/v47/i5/p608
  • This publication is cited in the following 12 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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