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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 5, Pages 621–625 (Mi phts7897)  
This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

V. Ya. Aleshkina, A. A. Dubinova, M. N. Drozdova, B. N. Zvonkovb, K. E. Kudryavtseva, A. A. Tonkikhac, A. N. Yablonskiia, P. Wernerc

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
c Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany
Full-text PDF (574 kB) Citations (3)
Abstract: GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In$_{0.28}$Ga$_{0.72}$As and Ge layers, indirect in coordinate space, but direct in momentum space.
Received: 09.07.2012
Accepted: 20.07.2012
English version:
Semiconductors, 2013, Volume 47, Issue 5, Pages 636–640
DOI: https://doi.org/10.1134/S1063782613050047
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Ya. Aleshkin, A. A. Dubinov, M. N. Drozdov, B. N. Zvonkov, K. E. Kudryavtsev, A. A. Tonkikh, A. N. Yablonskii, P. Werner, “Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 621–625; Semiconductors, 47:5 (2013), 636–640
Citation in format AMSBIB
\Bibitem{AleDubDro13}
\by V.~Ya.~Aleshkin, A.~A.~Dubinov, M.~N.~Drozdov, B.~N.~Zvonkov, K.~E.~Kudryavtsev, A.~A.~Tonkikh, A.~N.~Yablonskii, P.~Werner
\paper Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 5
\pages 621--625
\mathnet{http://mi.mathnet.ru/phts7897}
\elib{https://elibrary.ru/item.asp?id=20319436}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 5
\pages 636--640
\crossref{https://doi.org/10.1134/S1063782613050047}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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