Electrical phenomena in a metal/nanooxide/$p^+$-silicon structure during its transformation to a resonant-tunneling diode

To investigate and develop novel silicon-based electronic components, the electro-physical effects in a metal-insulator-semiconductor (MIS) structure with nanometer size parameters, gained by enhancement of the silicon doping level up to $N_A\sim$ 10$^{19}$ cm$^{-3}$ and reduction of the oxide thickness down to 0.4–4.0 nm, have been studied. As a result of such changes, the MIS nanostructure satisfies necessary and sufficient conditions for the electron resonant tunneling that can be observed at relatively low (some volts) reverse biases. Thereby a MIS capacitor can be transformed into a resonant-tunneling diode with substantial extension of its properties and functions.